Comparative studies on InAlAs/InGaAs MOS-MHEMTs with different compressive/tensile-strained channel structures

Ching Sung Lee; Juan Chen Yeh; Wei Chou Hsu; Han Yin Liu; Bo Yi Chou

doi:10.1149/2.0031412jss

Comparative studies on InAlAs/InGaAs MOS-MHEMTs with different compressive/tensile-strained channel structures

Ching Sung Lee, Juan Chen Yeh, Wei Chou Hsu, Han Yin Liu, Bo Yi Chou

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Comparative studies of double δ-doped InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with different compressive-strained and tensile-strained channel structures have been made. In addition to the strain engineering of the heterostructure, the MOS-gate design is also integrated by using the cost-effective H₂O₂ oxidization technique. The tensile (compressive)-strained channel is devised by the In_0.52Al_0.48As/In_0.41Ga_0.59As (In_0.52Al_0.48As/In_0.63Ga_0.37As) heterostructure. Device characteristics with respect to different channel structures are physically studied. The impact-ionization-related kink effects in MHEMTs are significantly suppressed by the MOS-gate. Atomic force microscopy (AFM) and low-frequency noise (LFN) analysis were used to study the surface roughness and interface quality. As compared to the compressive-strained MOSMHEMT and conventional Schottky-gate devices, the present tensile-strained MOS-MHEMT design has demonstrated improved transconductance gain (g_m), current drive, intrinsic voltage gain (A_V), and power performance.

Original language	English
Pages (from-to)	Q227-Q231
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	12
DOIs	https://doi.org/10.1149/2.0031412jss
Publication status	Published - 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.0031412jss

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title = "Comparative studies on InAlAs/InGaAs MOS-MHEMTs with different compressive/tensile-strained channel structures",

abstract = "Comparative studies of double δ-doped InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with different compressive-strained and tensile-strained channel structures have been made. In addition to the strain engineering of the heterostructure, the MOS-gate design is also integrated by using the cost-effective H2O2 oxidization technique. The tensile (compressive)-strained channel is devised by the In0.52Al0.48As/In0.41Ga0.59As (In0.52Al0.48As/In0.63Ga0.37As) heterostructure. Device characteristics with respect to different channel structures are physically studied. The impact-ionization-related kink effects in MHEMTs are significantly suppressed by the MOS-gate. Atomic force microscopy (AFM) and low-frequency noise (LFN) analysis were used to study the surface roughness and interface quality. As compared to the compressive-strained MOSMHEMT and conventional Schottky-gate devices, the present tensile-strained MOS-MHEMT design has demonstrated improved transconductance gain (gm), current drive, intrinsic voltage gain (AV), and power performance.",

author = "Lee, {Ching Sung} and Yeh, {Juan Chen} and Hsu, {Wei Chou} and Liu, {Han Yin} and Chou, {Bo Yi}",

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year = "2014",

doi = "10.1149/2.0031412jss",

language = "English",

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AU - Lee, Ching Sung

AU - Yeh, Juan Chen

AU - Hsu, Wei Chou

AU - Liu, Han Yin

AU - Chou, Bo Yi

PY - 2014

Y1 - 2014

N2 - Comparative studies of double δ-doped InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with different compressive-strained and tensile-strained channel structures have been made. In addition to the strain engineering of the heterostructure, the MOS-gate design is also integrated by using the cost-effective H2O2 oxidization technique. The tensile (compressive)-strained channel is devised by the In0.52Al0.48As/In0.41Ga0.59As (In0.52Al0.48As/In0.63Ga0.37As) heterostructure. Device characteristics with respect to different channel structures are physically studied. The impact-ionization-related kink effects in MHEMTs are significantly suppressed by the MOS-gate. Atomic force microscopy (AFM) and low-frequency noise (LFN) analysis were used to study the surface roughness and interface quality. As compared to the compressive-strained MOSMHEMT and conventional Schottky-gate devices, the present tensile-strained MOS-MHEMT design has demonstrated improved transconductance gain (gm), current drive, intrinsic voltage gain (AV), and power performance.

AB - Comparative studies of double δ-doped InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with different compressive-strained and tensile-strained channel structures have been made. In addition to the strain engineering of the heterostructure, the MOS-gate design is also integrated by using the cost-effective H2O2 oxidization technique. The tensile (compressive)-strained channel is devised by the In0.52Al0.48As/In0.41Ga0.59As (In0.52Al0.48As/In0.63Ga0.37As) heterostructure. Device characteristics with respect to different channel structures are physically studied. The impact-ionization-related kink effects in MHEMTs are significantly suppressed by the MOS-gate. Atomic force microscopy (AFM) and low-frequency noise (LFN) analysis were used to study the surface roughness and interface quality. As compared to the compressive-strained MOSMHEMT and conventional Schottky-gate devices, the present tensile-strained MOS-MHEMT design has demonstrated improved transconductance gain (gm), current drive, intrinsic voltage gain (AV), and power performance.

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Comparative studies on InAlAs/InGaAs MOS-MHEMTs with different compressive/tensile-strained channel structures

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