Comparative study of Cu diffusion in Ru and Ru-C films for Cu metallization

Chun Wei Chen, Jiann Shing Jeng, Jen Sue Chen

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

In this paper, the diffusivities of copper in 15 nm thick Ru and Ru-C barrier layers are determined experimentally by using sheet resistance and X-ray diffraction measurements with the Cu/barrier/Si samples. By fitting the dependence of diffusivities on temperature, the activation energy for Cu diffusion in Ru-C film is 1.11 eV, which is substantially higher than that in Ru film (0.54 eV). Microstructural analysis by transmission electron microscopy combined with energy-dispersive X-ray suggests that the higher activation energy for Cu diffusion in Ru-C is associated with the stuffing of added carbon atoms on the grain boundaries of the Ru matrix and consequently leading to the superior diffusion barrier performance of the Ru-C film.

Original languageEnglish
Pages (from-to)H997-H1002
JournalJournal of the Electrochemical Society
Volume157
Issue number11
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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