Abstract
In this paper, the diffusivities of copper in 15 nm thick Ru and Ru-C barrier layers are determined experimentally by using sheet resistance and X-ray diffraction measurements with the Cu/barrier/Si samples. By fitting the dependence of diffusivities on temperature, the activation energy for Cu diffusion in Ru-C film is 1.11 eV, which is substantially higher than that in Ru film (0.54 eV). Microstructural analysis by transmission electron microscopy combined with energy-dispersive X-ray suggests that the higher activation energy for Cu diffusion in Ru-C is associated with the stuffing of added carbon atoms on the grain boundaries of the Ru matrix and consequently leading to the superior diffusion barrier performance of the Ru-C film.
| Original language | English |
|---|---|
| Pages (from-to) | H997-H1002 |
| Journal | Journal of the Electrochemical Society |
| Volume | 157 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2010 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
