Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications

Hung Ming Chuang, Kong Beng Thei, Sheng Fu Tsai, Chun Tsen Lu, Xin Da Liao, Kuan Ming Lee, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We have investigated the interesting double ion implant (DII) Ti-salicide and pre-amorphization implant (PAI) Co-salicide techniques for ultra-large-scale integration (ULSI) applications. The DII technique is combined with germanium (or arsenic) PAI and Si ion-mixing processes. The sheet resistances both of n+ and p+ polysilicons are decreased when the DII Ti-salicide and PAI Co-salicide techniques are used. Moreover, the incomplete phase transformation of Ti-salicide is not observed in 0.2/μm wide polysilicon devices with the Ge DII process. Furthermore, the n+/p-well junction leakage current is reduced when the Si ion-mixing process is used. Experimentally, based on the studied DII Ti-salicide and PAI Co-salicide techniques, high-performance 0.2 μm CMOS devices have been successfully fabricated.

Original languageEnglish
Pages (from-to)1075-1080
Number of pages6
JournalSemiconductor Science and Technology
Volume17
Issue number10
DOIs
Publication statusPublished - 2002 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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