Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications

Hung Ming Chuang; Kong Beng Thei; Sheng Fu Tsai; Chun Tsen Lu; Xin Da Liao; Kuan Ming Lee; Wen-Chau Liu

doi:10.1088/0268-1242/17/10/308

Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications

Hung Ming Chuang, Kong Beng Thei, Sheng Fu Tsai, Chun Tsen Lu, Xin Da Liao, Kuan Ming Lee, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the interesting double ion implant (DII) Ti-salicide and pre-amorphization implant (PAI) Co-salicide techniques for ultra-large-scale integration (ULSI) applications. The DII technique is combined with germanium (or arsenic) PAI and Si ion-mixing processes. The sheet resistances both of n⁺ and p⁺ polysilicons are decreased when the DII Ti-salicide and PAI Co-salicide techniques are used. Moreover, the incomplete phase transformation of Ti-salicide is not observed in 0.2/μm wide polysilicon devices with the Ge DII process. Furthermore, the n⁺/p-well junction leakage current is reduced when the Si ion-mixing process is used. Experimentally, based on the studied DII Ti-salicide and PAI Co-salicide techniques, high-performance 0.2 μm CMOS devices have been successfully fabricated.

Original language	English
Pages (from-to)	1075-1080
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	17
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/17/10/308
Publication status	Published - 2002 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications",

abstract = "We have investigated the interesting double ion implant (DII) Ti-salicide and pre-amorphization implant (PAI) Co-salicide techniques for ultra-large-scale integration (ULSI) applications. The DII technique is combined with germanium (or arsenic) PAI and Si ion-mixing processes. The sheet resistances both of n+ and p+ polysilicons are decreased when the DII Ti-salicide and PAI Co-salicide techniques are used. Moreover, the incomplete phase transformation of Ti-salicide is not observed in 0.2/μm wide polysilicon devices with the Ge DII process. Furthermore, the n+/p-well junction leakage current is reduced when the Si ion-mixing process is used. Experimentally, based on the studied DII Ti-salicide and PAI Co-salicide techniques, high-performance 0.2 μm CMOS devices have been successfully fabricated.",

author = "Chuang, {Hung Ming} and Thei, {Kong Beng} and Tsai, {Sheng Fu} and Lu, {Chun Tsen} and Liao, {Xin Da} and Lee, {Kuan Ming} and Wen-Chau Liu",

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T1 - Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications

AU - Chuang, Hung Ming

AU - Thei, Kong Beng

AU - Tsai, Sheng Fu

AU - Lu, Chun Tsen

AU - Liao, Xin Da

AU - Lee, Kuan Ming

AU - Liu, Wen-Chau

PY - 2002/10/1

Y1 - 2002/10/1

N2 - We have investigated the interesting double ion implant (DII) Ti-salicide and pre-amorphization implant (PAI) Co-salicide techniques for ultra-large-scale integration (ULSI) applications. The DII technique is combined with germanium (or arsenic) PAI and Si ion-mixing processes. The sheet resistances both of n+ and p+ polysilicons are decreased when the DII Ti-salicide and PAI Co-salicide techniques are used. Moreover, the incomplete phase transformation of Ti-salicide is not observed in 0.2/μm wide polysilicon devices with the Ge DII process. Furthermore, the n+/p-well junction leakage current is reduced when the Si ion-mixing process is used. Experimentally, based on the studied DII Ti-salicide and PAI Co-salicide techniques, high-performance 0.2 μm CMOS devices have been successfully fabricated.

AB - We have investigated the interesting double ion implant (DII) Ti-salicide and pre-amorphization implant (PAI) Co-salicide techniques for ultra-large-scale integration (ULSI) applications. The DII technique is combined with germanium (or arsenic) PAI and Si ion-mixing processes. The sheet resistances both of n+ and p+ polysilicons are decreased when the DII Ti-salicide and PAI Co-salicide techniques are used. Moreover, the incomplete phase transformation of Ti-salicide is not observed in 0.2/μm wide polysilicon devices with the Ge DII process. Furthermore, the n+/p-well junction leakage current is reduced when the Si ion-mixing process is used. Experimentally, based on the studied DII Ti-salicide and PAI Co-salicide techniques, high-performance 0.2 μm CMOS devices have been successfully fabricated.

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Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications

Abstract

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