Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments

Tzu Pin Chen, Chi Jhung Lee, Li Yang Chen, Tsung Han Tsai, Yi Jhung Liu, Chien Chang Huang, Tai You Chen, Shiou Ying Cheng, Wen-Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The interesting InGaP/GaAs heterojunction bipolar transistors (HBTs) with different surface passivations on the base surface are fabricated and studied. Experimentally, the HBT device with sulfur treatment passivation displays the lowest offset voltage. However, the device with a 0.02 μm-thick emitter ledge structure reveals better transistor behaviors such as higher current gain and lower base surface recombination current. In addition, it also exhibits improved thermal stability. For the reliability test, the device with a 0.02 μm-thick emitter ledge structure shows the best performance. Therefore, from experimental results, the HBT device performance could be improved by appropriate base surface treatments, e.g., sulfur passivation and emitter ledge structure.

Original languageEnglish
Pages (from-to)715-722
Number of pages8
JournalSuperlattices and Microstructures
Volume46
Issue number4
DOIs
Publication statusPublished - 2009 Oct 1

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
surface treatment
ledges
Passivation
Surface treatment
heterojunctions
passivity
Sulfur
emitters
sulfur
Transistors
Thermodynamic stability
low voltage
high current
thermal stability
transistors
Electric potential
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chen, Tzu Pin ; Lee, Chi Jhung ; Chen, Li Yang ; Tsai, Tsung Han ; Liu, Yi Jhung ; Huang, Chien Chang ; Chen, Tai You ; Cheng, Shiou Ying ; Liu, Wen-Chau. / Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments. In: Superlattices and Microstructures. 2009 ; Vol. 46, No. 4. pp. 715-722.
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Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments. / Chen, Tzu Pin; Lee, Chi Jhung; Chen, Li Yang; Tsai, Tsung Han; Liu, Yi Jhung; Huang, Chien Chang; Chen, Tai You; Cheng, Shiou Ying; Liu, Wen-Chau.

In: Superlattices and Microstructures, Vol. 46, No. 4, 01.10.2009, p. 715-722.

Research output: Contribution to journalArticle

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