Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction

Jung Hui Tsai, Ching Sung Lee, Jia Cing Jhou, You Ren Wu, Chung Cheng Chiang, Yi Ting Chao, Wen Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this article, the influence of InGaAsP spacers inserted at base-collector (B-C) junction in the InP/In0.53Ga0.47As double heterojunction bipolar transistors is demonstrated by two-dimensional semiconductor simulation. Due to the addition of an InGaAsP spacer layer, two small potential spikes are formed at B-C junction and the current blocking effect is reduced. The results exhibit that the maximum current gain increases from 30 to 374 (375) as the thickness of InGaAsP spacer layer varies from 0 to 100 Å (300 Å). On the other hand, the device with a thicker spacer layer (300 Å) could effectively improve the knee effect of the current-voltage curves as compared the other devices. In addition, the collector-emitter offset voltages less than 10 mV are observed in the three devices.

Original languageEnglish
Pages (from-to)1391-1396
Number of pages6
JournalSemiconductors
Volume47
Issue number10
DOIs
Publication statusPublished - 2013 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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