Comparative study of In0.52Al0.48As/In xGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Dong Hai Huang, Wei Chou Hsu, Yu Shyan Lin, Yue Huei Wu, Rong Tay Hsu, Juin Chin Huang, Yin Kai Liao

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7 Citations (Scopus)

Abstract

InP-based InAlAs/InxGa1-xAs/InP high-electron-mobility transistors (HEMTs) with a symmetrically graded channel (SGC-HEMT) and an inversely graded channel (IGC-HEMT) were fabricated and studied. The SGC-HEMT exhibits better Hall, dc and RF characteristics than the IGC-HEMT because there are more electrons accumulated in the symmetrically graded channel. However, the IGC-HEMT has better thermal stability than the SGC-HEMT because the former has higher bandgap discontinuity at the channel/buffer heterojunction and less Coulomb scattering from a δ-doped layer. Furthermore, the IGC-HEMT sustains larger output power than the SGC-HEMT attributed to better breakdown characteristics. Therefore, HEMTs with the symmetrically graded and an inversely graded channel are suitable for high-speed and high-power applications, respectively.

Original languageEnglish
Pages (from-to)781-785
Number of pages5
JournalSemiconductor Science and Technology
Volume21
Issue number6
DOIs
Publication statusPublished - 2006 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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