Comparative study of In0.52Al0.48As/In xGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Dong Hai Huang, Wei-Chou Hsu, Yu Shyan Lin, Yue Huei Wu, Rong Tay Hsu, Juin Chin Huang, Yin Kai Liao

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

InP-based InAlAs/InxGa1-xAs/InP high-electron-mobility transistors (HEMTs) with a symmetrically graded channel (SGC-HEMT) and an inversely graded channel (IGC-HEMT) were fabricated and studied. The SGC-HEMT exhibits better Hall, dc and RF characteristics than the IGC-HEMT because there are more electrons accumulated in the symmetrically graded channel. However, the IGC-HEMT has better thermal stability than the SGC-HEMT because the former has higher bandgap discontinuity at the channel/buffer heterojunction and less Coulomb scattering from a δ-doped layer. Furthermore, the IGC-HEMT sustains larger output power than the SGC-HEMT attributed to better breakdown characteristics. Therefore, HEMTs with the symmetrically graded and an inversely graded channel are suitable for high-speed and high-power applications, respectively.

Original languageEnglish
Pages (from-to)781-785
Number of pages5
JournalSemiconductor Science and Technology
Volume21
Issue number6
DOIs
Publication statusPublished - 2006 Jun 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Heterojunctions
heterojunctions
discontinuity
Buffers
Energy gap
Thermodynamic stability
thermal stability
buffers
breakdown
high speed
Scattering
Electrons
output

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Huang, Dong Hai ; Hsu, Wei-Chou ; Lin, Yu Shyan ; Wu, Yue Huei ; Hsu, Rong Tay ; Huang, Juin Chin ; Liao, Yin Kai. / Comparative study of In0.52Al0.48As/In xGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 6. pp. 781-785.
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abstract = "InP-based InAlAs/InxGa1-xAs/InP high-electron-mobility transistors (HEMTs) with a symmetrically graded channel (SGC-HEMT) and an inversely graded channel (IGC-HEMT) were fabricated and studied. The SGC-HEMT exhibits better Hall, dc and RF characteristics than the IGC-HEMT because there are more electrons accumulated in the symmetrically graded channel. However, the IGC-HEMT has better thermal stability than the SGC-HEMT because the former has higher bandgap discontinuity at the channel/buffer heterojunction and less Coulomb scattering from a δ-doped layer. Furthermore, the IGC-HEMT sustains larger output power than the SGC-HEMT attributed to better breakdown characteristics. Therefore, HEMTs with the symmetrically graded and an inversely graded channel are suitable for high-speed and high-power applications, respectively.",
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Comparative study of In0.52Al0.48As/In xGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel. / Huang, Dong Hai; Hsu, Wei-Chou; Lin, Yu Shyan; Wu, Yue Huei; Hsu, Rong Tay; Huang, Juin Chin; Liao, Yin Kai.

In: Semiconductor Science and Technology, Vol. 21, No. 6, 01.06.2006, p. 781-785.

Research output: Contribution to journalArticle

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AU - Hsu, Wei-Chou

AU - Lin, Yu Shyan

AU - Wu, Yue Huei

AU - Hsu, Rong Tay

AU - Huang, Juin Chin

AU - Liao, Yin Kai

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