Comparative study of nucleation processes for the growth of nanocrystalline diamond

Y. K. Liu; P. L. Tso; I. N. Lin; Y. Tzeng; Y. C. Chen

doi:10.1016/j.diamond.2005.06.020

Comparative study of nucleation processes for the growth of nanocrystalline diamond

Y. K. Liu, P. L. Tso, I. N. Lin, Y. Tzeng, Y. C. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Methods for seeding silicon substrates with pretreatments and the in situ generation of diamond nuclei by the bias enhanced nucleation (BEN) have been studied to examine their effects on the nucleation density as well as the morphology of grown and seeded sides, the growth rate, and the quality of nanocrystalline diamond films. Pretreatments including mechanical abrasion by diamond paste, exposure of the silicon substrate to a hydrocarbon plasma, and ultrasonication of silicon in solvents with suspended nano- or micro-diamond powders were studied. With an optimized diamond seeding or nucleation process, ultra-thin, smooth and homogenous nanocrystalline diamond films can be fabricated.

Original language	English
Pages (from-to)	234-238
Number of pages	5
Journal	Diamond and Related Materials
Volume	15
Issue number	2-3
DOIs	https://doi.org/10.1016/j.diamond.2005.06.020
Publication status	Published - 2006 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2005.06.020

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abstract = "Methods for seeding silicon substrates with pretreatments and the in situ generation of diamond nuclei by the bias enhanced nucleation (BEN) have been studied to examine their effects on the nucleation density as well as the morphology of grown and seeded sides, the growth rate, and the quality of nanocrystalline diamond films. Pretreatments including mechanical abrasion by diamond paste, exposure of the silicon substrate to a hydrocarbon plasma, and ultrasonication of silicon in solvents with suspended nano- or micro-diamond powders were studied. With an optimized diamond seeding or nucleation process, ultra-thin, smooth and homogenous nanocrystalline diamond films can be fabricated.",

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AU - Liu, Y. K.

AU - Tso, P. L.

AU - Lin, I. N.

AU - Tzeng, Y.

AU - Chen, Y. C.

PY - 2006/2

Y1 - 2006/2

N2 - Methods for seeding silicon substrates with pretreatments and the in situ generation of diamond nuclei by the bias enhanced nucleation (BEN) have been studied to examine their effects on the nucleation density as well as the morphology of grown and seeded sides, the growth rate, and the quality of nanocrystalline diamond films. Pretreatments including mechanical abrasion by diamond paste, exposure of the silicon substrate to a hydrocarbon plasma, and ultrasonication of silicon in solvents with suspended nano- or micro-diamond powders were studied. With an optimized diamond seeding or nucleation process, ultra-thin, smooth and homogenous nanocrystalline diamond films can be fabricated.

AB - Methods for seeding silicon substrates with pretreatments and the in situ generation of diamond nuclei by the bias enhanced nucleation (BEN) have been studied to examine their effects on the nucleation density as well as the morphology of grown and seeded sides, the growth rate, and the quality of nanocrystalline diamond films. Pretreatments including mechanical abrasion by diamond paste, exposure of the silicon substrate to a hydrocarbon plasma, and ultrasonication of silicon in solvents with suspended nano- or micro-diamond powders were studied. With an optimized diamond seeding or nucleation process, ultra-thin, smooth and homogenous nanocrystalline diamond films can be fabricated.

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JO - Diamond and Related Materials

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ER -

Comparative study of nucleation processes for the growth of nanocrystalline diamond

Abstract

All Science Journal Classification (ASJC) codes

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