Comparative study of process variations in junctionless and conventional double-gate MOSFETs

Chun Yu Chen; Jyi Tsong Lin; Meng-Hsueh Chiang

doi:10.1109/NMDC.2013.6707461

Comparative study of process variations in junctionless and conventional double-gate MOSFETs

Chun Yu Chen, Jyi Tsong Lin, Meng-Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

This work presents an in-detail investigation of process variations in symmetrical junctionless double-gate CMOS using 2D numerical simulation. General variability issues including oxide thickness, gate work function, and channel thickness are discussed. Uniform probability density function was assumed for the dopant atom location in the junctionless channel. Based on the statistical doping profiles, device simulation was performed by solving 2D drift-diffusion equations with modified local density approximation as used mostly in bulks device for quantum confinement. This paper is organized as follows. Section II introduces the simulation technique for device structure. Section III presents a comprehensive analysis for impact of process fluctuations on threshold voltage. Finally, conclusions are drawn.

Original language	English
Title of host publication	IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
Publisher	IEEE Computer Society
Pages	81-83
Number of pages	3
ISBN (Print)	9781479933877
DOIs	https://doi.org/10.1109/NMDC.2013.6707461
Publication status	Published - 2013
Event	2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013 - Tainan, Taiwan Duration: 2013 Oct 6 → 2013 Oct 9

Other

Other	2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
Country/Territory	Taiwan
City	Tainan
Period	13-10-06 → 13-10-09

All Science Journal Classification (ASJC) codes

Mechanics of Materials

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10.1109/NMDC.2013.6707461

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title = "Comparative study of process variations in junctionless and conventional double-gate MOSFETs",

abstract = "This work presents an in-detail investigation of process variations in symmetrical junctionless double-gate CMOS using 2D numerical simulation. General variability issues including oxide thickness, gate work function, and channel thickness are discussed. Uniform probability density function was assumed for the dopant atom location in the junctionless channel. Based on the statistical doping profiles, device simulation was performed by solving 2D drift-diffusion equations with modified local density approximation as used mostly in bulks device for quantum confinement. This paper is organized as follows. Section II introduces the simulation technique for device structure. Section III presents a comprehensive analysis for impact of process fluctuations on threshold voltage. Finally, conclusions are drawn.",

author = "Chen, {Chun Yu} and Lin, {Jyi Tsong} and Meng-Hsueh Chiang",

year = "2013",

doi = "10.1109/NMDC.2013.6707461",

language = "English",

isbn = "9781479933877",

pages = "81--83",

booktitle = "IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013",

publisher = "IEEE Computer Society",

address = "United States",

note = "2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013 ; Conference date: 06-10-2013 Through 09-10-2013",

}

Chen, CY, Lin, JT & Chiang, M-H 2013, Comparative study of process variations in junctionless and conventional double-gate MOSFETs. in IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013., 6707461, IEEE Computer Society, pp. 81-83, 2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013, Tainan, Taiwan, 13-10-06. https://doi.org/10.1109/NMDC.2013.6707461

TY - GEN

T1 - Comparative study of process variations in junctionless and conventional double-gate MOSFETs

AU - Chen, Chun Yu

AU - Lin, Jyi Tsong

AU - Chiang, Meng-Hsueh

PY - 2013

Y1 - 2013

N2 - This work presents an in-detail investigation of process variations in symmetrical junctionless double-gate CMOS using 2D numerical simulation. General variability issues including oxide thickness, gate work function, and channel thickness are discussed. Uniform probability density function was assumed for the dopant atom location in the junctionless channel. Based on the statistical doping profiles, device simulation was performed by solving 2D drift-diffusion equations with modified local density approximation as used mostly in bulks device for quantum confinement. This paper is organized as follows. Section II introduces the simulation technique for device structure. Section III presents a comprehensive analysis for impact of process fluctuations on threshold voltage. Finally, conclusions are drawn.

AB - This work presents an in-detail investigation of process variations in symmetrical junctionless double-gate CMOS using 2D numerical simulation. General variability issues including oxide thickness, gate work function, and channel thickness are discussed. Uniform probability density function was assumed for the dopant atom location in the junctionless channel. Based on the statistical doping profiles, device simulation was performed by solving 2D drift-diffusion equations with modified local density approximation as used mostly in bulks device for quantum confinement. This paper is organized as follows. Section II introduces the simulation technique for device structure. Section III presents a comprehensive analysis for impact of process fluctuations on threshold voltage. Finally, conclusions are drawn.

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U2 - 10.1109/NMDC.2013.6707461

DO - 10.1109/NMDC.2013.6707461

M3 - Conference contribution

AN - SCOPUS:84893774788

SN - 9781479933877

SP - 81

EP - 83

BT - IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013

PB - IEEE Computer Society

T2 - 2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013

Y2 - 6 October 2013 through 9 October 2013

ER -

Comparative study of process variations in junctionless and conventional double-gate MOSFETs

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