Comparative Study on Graded-Barrier AlxGa1-xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

Ching Sung Lee, Wei Chou Hsu, Yi Ping Huang, Han Yin Liu, Wen Luh Yang, Shen Tin Yang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Comparative study on a novel Al2O3-dielectric graded-barrier (GB) AlxGa1-xN/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al0.26Ga0.74N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB AlxGa1-xN was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al2O3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max), maximum drain-source current density (I DS,max), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on/I off), high frequencies, and power performance are investigated.

Original languageEnglish
Article number065004
JournalSemiconductor Science and Technology
Volume33
Issue number6
DOIs
Publication statusPublished - 2018 Apr 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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