TY - JOUR
T1 - Comparative Study on Graded-Barrier AlxGa1-xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique
AU - Lee, Ching Sung
AU - Hsu, Wei Chou
AU - Huang, Yi Ping
AU - Liu, Han Yin
AU - Yang, Wen Luh
AU - Yang, Shen Tin
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, R.O.C. under contract no. of MOST 105-2221-E-035-076-MY3.
PY - 2018/4/26
Y1 - 2018/4/26
N2 - Comparative study on a novel Al2O3-dielectric graded-barrier (GB) AlxGa1-xN/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al0.26Ga0.74N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB AlxGa1-xN was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al2O3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max), maximum drain-source current density (I DS,max), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on/I off), high frequencies, and power performance are investigated.
AB - Comparative study on a novel Al2O3-dielectric graded-barrier (GB) AlxGa1-xN/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al0.26Ga0.74N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB AlxGa1-xN was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al2O3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max), maximum drain-source current density (I DS,max), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on/I off), high frequencies, and power performance are investigated.
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U2 - 10.1088/1361-6641/aabc3c
DO - 10.1088/1361-6641/aabc3c
M3 - Article
AN - SCOPUS:85048114470
SN - 0268-1242
VL - 33
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 6
M1 - 065004
ER -