Comparative Study on Graded-Barrier Al x Ga 1-x N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

Ching Sung Lee, Wei-Chou Hsu, Yi Ping Huang, Han Yin Liu, Wen Luh Yang, Shen Tin Yang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Comparative study on a novel Al 2 O 3 -dielectric graded-barrier (GB) Al x Ga 1-x N/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al 0.26 Ga 0.74 N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB Al x Ga 1-x N was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al 2 O 3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max ), maximum drain-source current density (I DS,max ), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on /I off ), high frequencies, and power performance are investigated.

Original languageEnglish
Article number065004
JournalSemiconductor Science and Technology
Volume33
Issue number6
DOIs
Publication statusPublished - 2018 Apr 26

Fingerprint

Spray pyrolysis
High electron mobility transistors
metal oxide semiconductors
pyrolysis
sprayers
field effect transistors
ultrasonics
Ultrasonics
Metals
Gate dielectrics
Transconductance
Electric breakdown
Passivation
Current density
Electric potential
Costs
transconductance
electrical faults
passivity
linearity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Comparative Study on Graded-Barrier Al x Ga 1-x N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique",
abstract = "Comparative study on a novel Al 2 O 3 -dielectric graded-barrier (GB) Al x Ga 1-x N/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al 0.26 Ga 0.74 N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB Al x Ga 1-x N was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al 2 O 3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max ), maximum drain-source current density (I DS,max ), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on /I off ), high frequencies, and power performance are investigated.",
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Comparative Study on Graded-Barrier Al x Ga 1-x N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique . / Lee, Ching Sung; Hsu, Wei-Chou; Huang, Yi Ping; Liu, Han Yin; Yang, Wen Luh; Yang, Shen Tin.

In: Semiconductor Science and Technology, Vol. 33, No. 6, 065004, 26.04.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Comparative Study on Graded-Barrier Al x Ga 1-x N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

AU - Lee, Ching Sung

AU - Hsu, Wei-Chou

AU - Huang, Yi Ping

AU - Liu, Han Yin

AU - Yang, Wen Luh

AU - Yang, Shen Tin

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