Comparative study on temperature-dependent characteristics of InPInGaAs single- and double-heterojunction bipolar transistors

Wei Hsin Chen, Tzu Pin Chen, Chi Jhung Lee, Ching Wen Hung, Kuei Yi Chu, Li Yang Chen, Tsung Han Tsai, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Interesting temperature-dependent characteristics of InPInGaAs -based single-heterojunction bipolar transistor (SHBT) and double-heterojunction bipolar transistor (DHBT) devices are compared and studied. Experimentally, both studied devices show wider collector current (IC) operation regions, with over 11 decades in magnitude of collector current (IC = 10-12 to 10-1 A). However, the studied DHBT exhibits improved breakdown characteristics [common-emitter breakdown voltage (BVCEO) =8.05 V and common-base breakdown voltage (BVCBO) =11.3 V] and low output conductance at high temperature. Moreover, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InPInGaAs conventional DHBT are not observed in the DHBT device. As compared with the studied SHBT, the studied DHBT shows a lower multiplication factor and weaker temperature dependence. Therefore, it is known that, based on experimental results, the studied DHBT device provides the promise for low-voltage and low-power circuit applications.

Original languageEnglish
Pages (from-to)618-623
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number2
DOIs
Publication statusPublished - 2008 Apr 9

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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