TY - JOUR
T1 - Comparative study on temperature-dependent characteristics of InPInGaAs single- and double-heterojunction bipolar transistors
AU - Chen, Wei Hsin
AU - Chen, Tzu Pin
AU - Lee, Chi Jhung
AU - Hung, Ching Wen
AU - Chu, Kuei Yi
AU - Chen, Li Yang
AU - Tsai, Tsung Han
AU - Liu, Wen Chau
PY - 2008/4/9
Y1 - 2008/4/9
N2 - Interesting temperature-dependent characteristics of InPInGaAs -based single-heterojunction bipolar transistor (SHBT) and double-heterojunction bipolar transistor (DHBT) devices are compared and studied. Experimentally, both studied devices show wider collector current (IC) operation regions, with over 11 decades in magnitude of collector current (IC = 10-12 to 10-1 A). However, the studied DHBT exhibits improved breakdown characteristics [common-emitter breakdown voltage (BVCEO) =8.05 V and common-base breakdown voltage (BVCBO) =11.3 V] and low output conductance at high temperature. Moreover, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InPInGaAs conventional DHBT are not observed in the DHBT device. As compared with the studied SHBT, the studied DHBT shows a lower multiplication factor and weaker temperature dependence. Therefore, it is known that, based on experimental results, the studied DHBT device provides the promise for low-voltage and low-power circuit applications.
AB - Interesting temperature-dependent characteristics of InPInGaAs -based single-heterojunction bipolar transistor (SHBT) and double-heterojunction bipolar transistor (DHBT) devices are compared and studied. Experimentally, both studied devices show wider collector current (IC) operation regions, with over 11 decades in magnitude of collector current (IC = 10-12 to 10-1 A). However, the studied DHBT exhibits improved breakdown characteristics [common-emitter breakdown voltage (BVCEO) =8.05 V and common-base breakdown voltage (BVCBO) =11.3 V] and low output conductance at high temperature. Moreover, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InPInGaAs conventional DHBT are not observed in the DHBT device. As compared with the studied SHBT, the studied DHBT shows a lower multiplication factor and weaker temperature dependence. Therefore, it is known that, based on experimental results, the studied DHBT device provides the promise for low-voltage and low-power circuit applications.
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U2 - 10.1116/1.2890707
DO - 10.1116/1.2890707
M3 - Article
AN - SCOPUS:41549131704
VL - 26
SP - 618
EP - 623
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 2
ER -