Abstract
Al0.32 Ga0.68 NGaN heterostructure field-effect transistors (HFETs) grown by low-pressure metallorganic chemical vapor deposition are successfully fabricated. A Mg-doped insulating GaN layer is inserted to suppress the leakage current, improve the breakdown voltages, and yield excellent pinch-off characteristics. Moreover, HFETs with different channel thicknesses of 1200, 1500, and 1800 Å are investigated. Experimental results show that an HFET with a 1800 Å thick channel layer has the highest electron mobility, electron concentration, drain current, and extrinsic transconductance.
| Original language | English |
|---|---|
| Pages (from-to) | H131-H133 |
| Journal | Journal of the Electrochemical Society |
| Volume | 154 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2007 Feb 19 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
