Comparison of Al0.32 Ga0.68 NGaN heterostructure field-effect transistors with different channel thicknesses

Tzong Bin Wang, Wei Chou Hsu, Jun Long Su, Rong Tay Hsu, Yu Huei Wu, Yu Shyan Lin, Ke Hua Su

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Al0.32 Ga0.68 NGaN heterostructure field-effect transistors (HFETs) grown by low-pressure metallorganic chemical vapor deposition are successfully fabricated. A Mg-doped insulating GaN layer is inserted to suppress the leakage current, improve the breakdown voltages, and yield excellent pinch-off characteristics. Moreover, HFETs with different channel thicknesses of 1200, 1500, and 1800 Å are investigated. Experimental results show that an HFET with a 1800 Å thick channel layer has the highest electron mobility, electron concentration, drain current, and extrinsic transconductance.

Original languageEnglish
Pages (from-to)H131-H133
JournalJournal of the Electrochemical Society
Volume154
Issue number3
DOIs
Publication statusPublished - 2007 Feb 19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Comparison of Al0.32 Ga0.68 NGaN heterostructure field-effect transistors with different channel thicknesses'. Together they form a unique fingerprint.

Cite this