Al0.32 Ga0.68 NGaN heterostructure field-effect transistors (HFETs) grown by low-pressure metallorganic chemical vapor deposition are successfully fabricated. A Mg-doped insulating GaN layer is inserted to suppress the leakage current, improve the breakdown voltages, and yield excellent pinch-off characteristics. Moreover, HFETs with different channel thicknesses of 1200, 1500, and 1800 Å are investigated. Experimental results show that an HFET with a 1800 Å thick channel layer has the highest electron mobility, electron concentration, drain current, and extrinsic transconductance.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry