Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells

R. Sundaramoorthy; I. L. Repins; T. Gennett; F. J. Pern; D. Albin; Jian V. Li; C. DeHart; S. Glynn; J. D. Perkins; D. S. Ginley; T. Gessert

doi:10.1109/PVSC.2009.5411376

Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells

R. Sundaramoorthy, I. L. Repins, T. Gennett, F. J. Pern, D. Albin, Jian V. Li, C. DeHart, S. Glynn, J. D. Perkins, D. S. Ginley, T. Gessert

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

We investigated the optical and electrical properties of amorphous InZnO (IZO) as a potential replacement of AI-doped ZnO (AZO) conducting window layer for CuinGaSe₂ (CIGS) solar cells. The device performance of CIGS devices with IZO of different thickness and sheet resistance was compared with that of CIGS standard devices with AZO. The results show that the optical and electrical properties of IZO were affected by deposition conditions, especially by the oxygen concentration, and thickness. Initial results on the CIGS solar cells showed that devices with IZO yield cell efficiencies comparable to that of the devices with standard AZO, when the sheet resistance of IZO was close to that of AZO.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	1576-1581
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2009.5411376
Publication status	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 2009 Jun 7 → 2009 Jun 12

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	09-06-07 → 09-06-12

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2009.5411376

Cite this

Sundaramoorthy, R., Repins, I. L., Gennett, T., Pern, F. J., Albin, D., Li, J. V., DeHart, C., Glynn, S., Perkins, J. D., Ginley, D. S., & Gessert, T. (2009). Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 1576-1581). Article 5411376 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411376

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title = "Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells",

abstract = "We investigated the optical and electrical properties of amorphous InZnO (IZO) as a potential replacement of AI-doped ZnO (AZO) conducting window layer for CuinGaSe2 (CIGS) solar cells. The device performance of CIGS devices with IZO of different thickness and sheet resistance was compared with that of CIGS standard devices with AZO. The results show that the optical and electrical properties of IZO were affected by deposition conditions, especially by the oxygen concentration, and thickness. Initial results on the CIGS solar cells showed that devices with IZO yield cell efficiencies comparable to that of the devices with standard AZO, when the sheet resistance of IZO was close to that of AZO.",

author = "R. Sundaramoorthy and Repins, {I. L.} and T. Gennett and Pern, {F. J.} and D. Albin and Li, {Jian V.} and C. DeHart and S. Glynn and Perkins, {J. D.} and Ginley, {D. S.} and T. Gessert",

year = "2009",

doi = "10.1109/PVSC.2009.5411376",

language = "English",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1576--1581",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Sundaramoorthy, R, Repins, IL, Gennett, T, Pern, FJ, Albin, D, Li, JV, DeHart, C, Glynn, S, Perkins, JD, Ginley, DS & Gessert, T 2009, Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411376, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1576-1581, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 09-06-07. https://doi.org/10.1109/PVSC.2009.5411376

Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells. / Sundaramoorthy, R.; Repins, I. L.; Gennett, T. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 1576-1581 5411376 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Gennett, T.

AU - Pern, F. J.

AU - Albin, D.

AU - Li, Jian V.

AU - DeHart, C.

AU - Glynn, S.

AU - Perkins, J. D.

AU - Ginley, D. S.

AU - Gessert, T.

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AB - We investigated the optical and electrical properties of amorphous InZnO (IZO) as a potential replacement of AI-doped ZnO (AZO) conducting window layer for CuinGaSe2 (CIGS) solar cells. The device performance of CIGS devices with IZO of different thickness and sheet resistance was compared with that of CIGS standard devices with AZO. The results show that the optical and electrical properties of IZO were affected by deposition conditions, especially by the oxygen concentration, and thickness. Initial results on the CIGS solar cells showed that devices with IZO yield cell efficiencies comparable to that of the devices with standard AZO, when the sheet resistance of IZO was close to that of AZO.

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Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells

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