Comparison of CdS/CdTe superstrate and substrate devices fabricated with a ZnTe:Cu contact interface

T. A. Gessert, R. G. Dhere, J. N. Duenow, J. V. Li, S. E. Asher, M. R. Young

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Superstrate and substrate CdS/CdTe devices have been fabricated with a ZnTe:Cu contact. The main variable probed is the effect of Cu diffusion from the ZnTe:Cu contact interface layer. A combination of electrical and composition analysis indicates that, for the substrate devices produced for this study, the amount of Cu in the CdTe layer is too high for optimum device operation. Admittance spectroscopy analysis suggests that superstrate devices with excessive Cu have similar defect functionality as the substrate devices with a ZnTe:Cu contact interface. Temperature-dependant, current-voltage analysis further suggests that it may be possible to ascribe subtle differences in I-;V rollover to either a back-contact barrier or an artifact of Cu in the CdS.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages335-339
Number of pages5
DOIs
Publication statusPublished - 2010 Dec 20
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 2010 Jun 202010 Jun 25

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period10-06-2010-06-25

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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