TY - GEN
T1 - Comparison of CdS/CdTe superstrate and substrate devices fabricated with a ZnTe:Cu contact interface
AU - Gessert, T. A.
AU - Dhere, R. G.
AU - Duenow, J. N.
AU - Li, J. V.
AU - Asher, S. E.
AU - Young, M. R.
PY - 2010/12/20
Y1 - 2010/12/20
N2 - Superstrate and substrate CdS/CdTe devices have been fabricated with a ZnTe:Cu contact. The main variable probed is the effect of Cu diffusion from the ZnTe:Cu contact interface layer. A combination of electrical and composition analysis indicates that, for the substrate devices produced for this study, the amount of Cu in the CdTe layer is too high for optimum device operation. Admittance spectroscopy analysis suggests that superstrate devices with excessive Cu have similar defect functionality as the substrate devices with a ZnTe:Cu contact interface. Temperature-dependant, current-voltage analysis further suggests that it may be possible to ascribe subtle differences in I-;V rollover to either a back-contact barrier or an artifact of Cu in the CdS.
AB - Superstrate and substrate CdS/CdTe devices have been fabricated with a ZnTe:Cu contact. The main variable probed is the effect of Cu diffusion from the ZnTe:Cu contact interface layer. A combination of electrical and composition analysis indicates that, for the substrate devices produced for this study, the amount of Cu in the CdTe layer is too high for optimum device operation. Admittance spectroscopy analysis suggests that superstrate devices with excessive Cu have similar defect functionality as the substrate devices with a ZnTe:Cu contact interface. Temperature-dependant, current-voltage analysis further suggests that it may be possible to ascribe subtle differences in I-;V rollover to either a back-contact barrier or an artifact of Cu in the CdS.
UR - http://www.scopus.com/inward/record.url?scp=78650079769&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650079769&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5616922
DO - 10.1109/PVSC.2010.5616922
M3 - Conference contribution
AN - SCOPUS:78650079769
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 335
EP - 339
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -