Comparison of characteristics of conventional and LDD short channel MOSFETs

B. D. Liu

doi:10.1080/00207219108925470

Comparison of characteristics of conventional and LDD short channel MOSFETs

B. D. Liu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The channel electric field distributions of lightly-doped drain (LDD) and conventional MOSFETs are simulated. Both devices are fabricated and compared. The theoretical analysis and experimental results show that the hot electron effect in MOSFETs can be reduced by LDD structure. So the lifetimes of LDD devices are longer than those of conventional devices. However, the breakdown voltage, current driving capability and transconductance are lowered by the LDD structure.

Original language	English
Pages (from-to)	215-225
Number of pages	11
Journal	International Journal of Electronics
Volume	71
Issue number	2
DOIs	https://doi.org/10.1080/00207219108925470
Publication status	Published - 1991 Aug

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1080/00207219108925470

Cite this

@article{5f10dcee963b4bccbf8ef99fafc17d9f,

title = "Comparison of characteristics of conventional and LDD short channel MOSFETs",

abstract = "The channel electric field distributions of lightly-doped drain (LDD) and conventional MOSFETs are simulated. Both devices are fabricated and compared. The theoretical analysis and experimental results show that the hot electron effect in MOSFETs can be reduced by LDD structure. So the lifetimes of LDD devices are longer than those of conventional devices. However, the breakdown voltage, current driving capability and transconductance are lowered by the LDD structure.",

author = "Liu, {B. D.}",

year = "1991",

month = aug,

doi = "10.1080/00207219108925470",

language = "English",

volume = "71",

pages = "215--225",

journal = "International Journal of Electronics",

issn = "0020-7217",

publisher = "Taylor and Francis Ltd.",

number = "2",

}

TY - JOUR

T1 - Comparison of characteristics of conventional and LDD short channel MOSFETs

AU - Liu, B. D.

PY - 1991/8

Y1 - 1991/8

N2 - The channel electric field distributions of lightly-doped drain (LDD) and conventional MOSFETs are simulated. Both devices are fabricated and compared. The theoretical analysis and experimental results show that the hot electron effect in MOSFETs can be reduced by LDD structure. So the lifetimes of LDD devices are longer than those of conventional devices. However, the breakdown voltage, current driving capability and transconductance are lowered by the LDD structure.

AB - The channel electric field distributions of lightly-doped drain (LDD) and conventional MOSFETs are simulated. Both devices are fabricated and compared. The theoretical analysis and experimental results show that the hot electron effect in MOSFETs can be reduced by LDD structure. So the lifetimes of LDD devices are longer than those of conventional devices. However, the breakdown voltage, current driving capability and transconductance are lowered by the LDD structure.

UR - http://www.scopus.com/inward/record.url?scp=0026205232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026205232&partnerID=8YFLogxK

U2 - 10.1080/00207219108925470

DO - 10.1080/00207219108925470

M3 - Article

AN - SCOPUS:0026205232

VL - 71

SP - 215

EP - 225

JO - International Journal of Electronics

JF - International Journal of Electronics

SN - 0020-7217

IS - 2

ER -

Comparison of characteristics of conventional and LDD short channel MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this