The channel electric field distributions of lightly-doped drain (LDD) and conventional MOSFETs are simulated. Both devices are fabricated and compared. The theoretical analysis and experimental results show that the hot electron effect in MOSFETs can be reduced by LDD structure. So the lifetimes of LDD devices are longer than those of conventional devices. However, the breakdown voltage, current driving capability and transconductance are lowered by the LDD structure.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering