Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

Chen Kuo Chiang, Chien Hung Wu, Chin Chien Liu, Jin Fu Lin, Chien Lun Yang, Jiun Yuan Wu, Shui Jinn Wang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The NH 3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO 2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO 2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiO x interfacial layer (IL) (about 0. 12 nm more in terms of EOT scaling) and a more densified HfZrO 2 layer compared to those obtained using NH 3 thermal annealing at a 16% nitrogen dose. NH 3 thermal nitridation causes a large nitrogen distribution tail at the SiO x IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

Original languageEnglish
Pages (from-to)535-539
Number of pages5
JournalElectronic Materials Letters
Volume8
Issue number5
DOIs
Publication statusPublished - 2012 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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