Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

Chen Kuo Chiang; Chien Hung Wu; Chin Chien Liu; Jin Fu Lin; Chien Lun Yang; Jiun Yuan Wu; Shui Jinn Wang

doi:10.1007/s13391-012-2030-1

Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

Chen Kuo Chiang, Chien Hung Wu, Chin Chien Liu, Jin Fu Lin, Chien Lun Yang, Jiun Yuan Wu, Shui Jinn Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The NH ₃ thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO ₂) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO ₂ (HfZrON) film are reported. It is found that DPN can yield a thinner SiO _x interfacial layer (IL) (about 0. 12 nm more in terms of EOT scaling) and a more densified HfZrO ₂ layer compared to those obtained using NH ₃ thermal annealing at a 16% nitrogen dose. NH ₃ thermal nitridation causes a large nitrogen distribution tail at the SiO _x IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

Original language	English
Pages (from-to)	535-539
Number of pages	5
Journal	Electronic Materials Letters
Volume	8
Issue number	5
DOIs	https://doi.org/10.1007/s13391-012-2030-1
Publication status	Published - 2012 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Access to Document

10.1007/s13391-012-2030-1

Cite this

@article{d95602b1dec747439e0bfd1b31a20dca,

title = "Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process",

abstract = "The NH 3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO 2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO 2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiO x interfacial layer (IL) (about 0. 12 nm more in terms of EOT scaling) and a more densified HfZrO 2 layer compared to those obtained using NH 3 thermal annealing at a 16% nitrogen dose. NH 3 thermal nitridation causes a large nitrogen distribution tail at the SiO x IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.",

author = "Chiang, {Chen Kuo} and Wu, {Chien Hung} and Liu, {Chin Chien} and Lin, {Jin Fu} and Yang, {Chien Lun} and Wu, {Jiun Yuan} and Wang, {Shui Jinn}",

year = "2012",

month = oct,

doi = "10.1007/s13391-012-2030-1",

language = "English",

volume = "8",

pages = "535--539",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "5",

}

Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process. / Chiang, Chen Kuo; Wu, Chien Hung; Liu, Chin Chien et al.
In: Electronic Materials Letters, Vol. 8, No. 5, 10.2012, p. 535-539.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

AU - Chiang, Chen Kuo

AU - Wu, Chien Hung

AU - Liu, Chin Chien

AU - Lin, Jin Fu

AU - Yang, Chien Lun

AU - Wu, Jiun Yuan

AU - Wang, Shui Jinn

PY - 2012/10

Y1 - 2012/10

N2 - The NH 3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO 2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO 2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiO x interfacial layer (IL) (about 0. 12 nm more in terms of EOT scaling) and a more densified HfZrO 2 layer compared to those obtained using NH 3 thermal annealing at a 16% nitrogen dose. NH 3 thermal nitridation causes a large nitrogen distribution tail at the SiO x IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

AB - The NH 3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO 2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO 2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiO x interfacial layer (IL) (about 0. 12 nm more in terms of EOT scaling) and a more densified HfZrO 2 layer compared to those obtained using NH 3 thermal annealing at a 16% nitrogen dose. NH 3 thermal nitridation causes a large nitrogen distribution tail at the SiO x IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

UR - http://www.scopus.com/inward/record.url?scp=84868020423&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84868020423&partnerID=8YFLogxK

U2 - 10.1007/s13391-012-2030-1

DO - 10.1007/s13391-012-2030-1

M3 - Article

AN - SCOPUS:84868020423

SN - 1738-8090

VL - 8

SP - 535

EP - 539

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 5

ER -

Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this