Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses

H. K. Huang; C. P. Chang; M. P. Houng; Y. H. Wang

doi:10.1109/EDSSC.2005.1635240

Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses

H. K. Huang, C. P. Chang, M. P. Houng, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	199-202
Number of pages	4
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635240
Publication status	Published - 2005 Jan 1
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 2005 Dec 19 → 2005 Dec 21

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	05-12-19 → 05-12-21

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2005.1635240

Cite this

Huang, H. K., Chang, C. P., Houng, M. P., & Wang, Y. H. (2005). Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 199-202). Article 1635240 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635240

Huang, H. K. ; Chang, C. P. ; Houng, M. P. et al. / Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 199-202 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

@inproceedings{c0ee65595122409a9815b673cfdc3f3c,

title = "Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses",

abstract = "A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.",

author = "Huang, {H. K.} and Chang, {C. P.} and Houng, {M. P.} and Wang, {Y. H.}",

year = "2005",

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series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

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booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

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note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

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Huang, HK, Chang, CP, Houng, MP & Wang, YH 2005, Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635240, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 199-202, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635240

Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. / Huang, H. K.; Chang, C. P.; Houng, M. P. et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 199-202 1635240 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Wang, Y. H.

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N2 - A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.

AB - A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.

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Huang HK, Chang CP, Houng MP, Wang YH. Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 199-202. 1635240. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635240

Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses

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