Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses

H. K. Huang, C. P. Chang, M. P. Houng, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages199-202
Number of pages4
ISBN (Print)0780393392, 9780780393394
DOIs
Publication statusPublished - 2005 Jan 1
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 2005 Dec 192005 Dec 21

Publication series

Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period05-12-1905-12-21

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Huang, H. K., Chang, C. P., Houng, M. P., & Wang, Y. H. (2005). Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 199-202). [1635240] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635240