Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime and is obtained both at positive and negative gate-to-source bias (VGS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of VGS bias on the NDR characteristics is also investigated,

Original languageEnglish
Pages (from-to)367-372
Number of pages6
JournalMicroelectronics Reliability
Volume38
Issue number3
DOIs
Publication statusPublished - 1998 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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