Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Rong Chau Liu; Wen Chau Liu

doi:10.1016/S0026-2714(97)00063-2

Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (V_DS) regime and is obtained both at positive and negative gate-to-source bias (V_GS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of V_GS bias on the NDR characteristics is also investigated,

Original language	English
Pages (from-to)	367-372
Number of pages	6
Journal	Microelectronics Reliability
Volume	38
Issue number	3
DOIs	https://doi.org/10.1016/S0026-2714(97)00063-2
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2714(97)00063-2

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@article{0668adf0011b42f5961790936e91d965,

title = "Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)",

abstract = "N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime and is obtained both at positive and negative gate-to-source bias (VGS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of VGS bias on the NDR characteristics is also investigated,",

author = "Liu, {Rong Chau} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 86-2215-E006-005.",

year = "1998",

doi = "10.1016/S0026-2714(97)00063-2",

language = "English",

volume = "38",

pages = "367--372",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "3",

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TY - JOUR

T1 - Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

AU - Liu, Rong Chau

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 86-2215-E006-005.

PY - 1998

Y1 - 1998

N2 - N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime and is obtained both at positive and negative gate-to-source bias (VGS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of VGS bias on the NDR characteristics is also investigated,

AB - N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime and is obtained both at positive and negative gate-to-source bias (VGS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of VGS bias on the NDR characteristics is also investigated,

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U2 - 10.1016/S0026-2714(97)00063-2

DO - 10.1016/S0026-2714(97)00063-2

M3 - Article

AN - SCOPUS:0032017758

VL - 38

SP - 367

EP - 372

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 3

ER -

Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Abstract

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