Abstract
N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime and is obtained both at positive and negative gate-to-source bias (VGS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of VGS bias on the NDR characteristics is also investigated,
| Original language | English |
|---|---|
| Pages (from-to) | 367-372 |
| Number of pages | 6 |
| Journal | Microelectronics Reliability |
| Volume | 38 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1998 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering