Comparison of silicon nanocrystals embedded silicon oxide films by sputtering and PECVD

Chu Yun Hsiao, Chuan Feng Shih, Szu Hung Chen, Wei Teh Jiang

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4 Citations (Scopus)


The material and optical properties of the silicon rich oxide (SRO) films prepared by PECVD and sputtering were comprehensively studied. The optical properties were found strongly depend on the material properties of the SRO films. The photocurrent of the photodiodes using PECVD deposited SRO was ∼ 3 order higher than that prepared by the sputtering, while the leakage current of the later was much lower than the former, leading the light/dark current ratio of the sputtered photodiodes was higher than the PECVD prepared ones when the bias voltage exceeded ∼ 1.6 V. The transmission electron microscopy and the X-ray photoelectron spectroscopy were used to investigate the variations of the constitutive Si nanocrystals and the oxidation states. After annealing, size of the nanocrystals decreased and the oxidation states changed, changing the optical properties of the photodiodes.

Original languageEnglish
Pages (from-to)5086-5089
Number of pages4
JournalThin Solid Films
Issue number15
Publication statusPublished - 2011 May 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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