Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films

I. Nan Lin; Kuoguang Perng; Lien Hsin Lee; Chuan Feng Shih; Kuo Shung Liu; Gariant A. Evans; John W. Steeds

doi:10.1063/1.1289903

Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films

I. Nan Lin, Kuoguang Perng, Lien Hsin Lee, Chuan Feng Shih, Kuo Shung Liu, Gariant A. Evans, John W. Steeds

Department of Electrical Engineering

Research output: Contribution to journal › Review article › peer-review

12 Citations (Scopus)

Abstract

Effect of boron (or nitrogen) doping on the nucleation behavior of chemical-vapor-deposited diamond films was investigated. It is observed that inclusion of B(OCH₃)₃ species in gases markedly enhances, whereas addition of (NH₃)₂CO species pronouncedly retards the nucleation of diamonds. Raman spectroscopic analyses reveal that the probable mechanism is the formation of boron-carbon clusters due to boron incorporation. While the boron (or nitrogen) species incorporated insignificantly modify the microstructure, these dopants markedly alter the electron-field-emission behavior of the diamond films. The field-emission properties are optimized for films grown with B(OCH₃)₃=2 sccm [or (NH₃)₂CO=6 sccm]. The nitrogen-doped films exhibit significantly superior electron-field-emission capacity to the boron-doped films, even though the latter possess much lower electrical resistivity [viz. (J_e)_n=1020 μ A/cm², (ρ)_n=76 mΩ cm and (J_e)_b=360 μ A/cm², (ρ)_b=2.1 mΩ cm].

Original language	English
Pages (from-to)	1277-1279
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	9
DOIs	https://doi.org/10.1063/1.1289903
Publication status	Published - 2000 Aug 28

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1289903

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title = "Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films",

abstract = "Effect of boron (or nitrogen) doping on the nucleation behavior of chemical-vapor-deposited diamond films was investigated. It is observed that inclusion of B(OCH3)3 species in gases markedly enhances, whereas addition of (NH3)2CO species pronouncedly retards the nucleation of diamonds. Raman spectroscopic analyses reveal that the probable mechanism is the formation of boron-carbon clusters due to boron incorporation. While the boron (or nitrogen) species incorporated insignificantly modify the microstructure, these dopants markedly alter the electron-field-emission behavior of the diamond films. The field-emission properties are optimized for films grown with B(OCH3)3=2 sccm [or (NH3)2CO=6 sccm]. The nitrogen-doped films exhibit significantly superior electron-field-emission capacity to the boron-doped films, even though the latter possess much lower electrical resistivity [viz. (Je)n=1020 μ A/cm2, (ρ)n=76 mΩ cm and (Je)b=360 μ A/cm2, (ρ)b=2.1 mΩ cm].",

author = "Lin, {I. Nan} and Kuoguang Perng and Lee, {Lien Hsin} and Shih, {Chuan Feng} and Liu, {Kuo Shung} and Evans, {Gariant A.} and Steeds, {John W.}",

year = "2000",

month = aug,

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doi = "10.1063/1.1289903",

language = "English",

volume = "77",

pages = "1277--1279",

journal = "Applied Physics Letters",

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T1 - Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films

AU - Lin, I. Nan

AU - Perng, Kuoguang

AU - Lee, Lien Hsin

AU - Shih, Chuan Feng

AU - Liu, Kuo Shung

AU - Evans, Gariant A.

AU - Steeds, John W.

PY - 2000/8/28

Y1 - 2000/8/28

N2 - Effect of boron (or nitrogen) doping on the nucleation behavior of chemical-vapor-deposited diamond films was investigated. It is observed that inclusion of B(OCH3)3 species in gases markedly enhances, whereas addition of (NH3)2CO species pronouncedly retards the nucleation of diamonds. Raman spectroscopic analyses reveal that the probable mechanism is the formation of boron-carbon clusters due to boron incorporation. While the boron (or nitrogen) species incorporated insignificantly modify the microstructure, these dopants markedly alter the electron-field-emission behavior of the diamond films. The field-emission properties are optimized for films grown with B(OCH3)3=2 sccm [or (NH3)2CO=6 sccm]. The nitrogen-doped films exhibit significantly superior electron-field-emission capacity to the boron-doped films, even though the latter possess much lower electrical resistivity [viz. (Je)n=1020 μ A/cm2, (ρ)n=76 mΩ cm and (Je)b=360 μ A/cm2, (ρ)b=2.1 mΩ cm].

AB - Effect of boron (or nitrogen) doping on the nucleation behavior of chemical-vapor-deposited diamond films was investigated. It is observed that inclusion of B(OCH3)3 species in gases markedly enhances, whereas addition of (NH3)2CO species pronouncedly retards the nucleation of diamonds. Raman spectroscopic analyses reveal that the probable mechanism is the formation of boron-carbon clusters due to boron incorporation. While the boron (or nitrogen) species incorporated insignificantly modify the microstructure, these dopants markedly alter the electron-field-emission behavior of the diamond films. The field-emission properties are optimized for films grown with B(OCH3)3=2 sccm [or (NH3)2CO=6 sccm]. The nitrogen-doped films exhibit significantly superior electron-field-emission capacity to the boron-doped films, even though the latter possess much lower electrical resistivity [viz. (Je)n=1020 μ A/cm2, (ρ)n=76 mΩ cm and (Je)b=360 μ A/cm2, (ρ)b=2.1 mΩ cm].

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JO - Applied Physics Letters

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Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films

Abstract

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