Comparison of the electronic structures of AlN nanotips grown on p-and n-type Si substrates

J. W. Chiou, H. M. Tsai, C. W. Pao, C. L. Dong, C. L. Chang, F. Z. Chien, W. F. Pong, M. H. Tsai, S. C. Shi, C. F. Chen, L. C. Chen, K. H. Chen, I. H. Hong, C. H. Chen, H. J. Lin, J. H. Guo

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8 Citations (Scopus)

Abstract

Al and N K-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy (SPEM) and x-ray emission measurements were performed on AlN nanotips grown on p- and n-type Si substrates (p-AlN and n-AlN). Features and intensities in the Al and N K-edge XANES spectra of these AlN nanotips overall are similar. In contrast, the intensities of the valence-band SPEM spectra of p-AlN are apparently larger than those of n-AlN, which indicates that the valence-band density of states of p-AlN exceeds that of n-AlN. This result may be related to the observed enhancement of field-emission intensity of AlN nanotips grown on the p-type Si substrate.

Original languageEnglish
Pages (from-to)7523-7530
Number of pages8
JournalJournal of Physics Condensed Matter
Volume17
Issue number48
DOIs
Publication statusPublished - 2005 Dec 7

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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