Abstract
Al and N K-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy (SPEM) and x-ray emission measurements were performed on AlN nanotips grown on p- and n-type Si substrates (p-AlN and n-AlN). Features and intensities in the Al and N K-edge XANES spectra of these AlN nanotips overall are similar. In contrast, the intensities of the valence-band SPEM spectra of p-AlN are apparently larger than those of n-AlN, which indicates that the valence-band density of states of p-AlN exceeds that of n-AlN. This result may be related to the observed enhancement of field-emission intensity of AlN nanotips grown on the p-type Si substrate.
Original language | English |
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Pages (from-to) | 7523-7530 |
Number of pages | 8 |
Journal | Journal of Physics Condensed Matter |
Volume | 17 |
Issue number | 48 |
DOIs | |
Publication status | Published - 2005 Dec 7 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics