Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO 2SiO2 and HfO2SiO2 dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO 2 devices, as compared with that in HfO2 devices, is attributed to the reduction in tunneling attenuation length and in trap density simultaneously. Experimental results showed that the trap behavior of ZrO 2SiO2 dielectric gate stack changes not only the trap location from a high-k layer to a SiO2 interfacial layer but also the noise-dominated mechanism from carrier number fluctuation to the unified fluctuation model, which includes number fluctuation and correlated mobility fluctuation.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 2013|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering