Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise

Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Osbert Cheng, Po Chin Huang

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO 2SiO2 and HfO2SiO2 dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO 2 devices, as compared with that in HfO2 devices, is attributed to the reduction in tunneling attenuation length and in trap density simultaneously. Experimental results showed that the trap behavior of ZrO 2SiO2 dielectric gate stack changes not only the trap location from a high-k layer to a SiO2 interfacial layer but also the noise-dominated mechanism from carrier number fluctuation to the unified fluctuation model, which includes number fluctuation and correlated mobility fluctuation.

Original languageEnglish
Article number6392853
Pages (from-to)151-153
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Comparison of the trap behavior between ZrO<sub>2</sub> and HfO<sub>2</sub> gate stack nMOSFETs by 1/f noise and random telegraph noise'. Together they form a unique fingerprint.

Cite this