Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise

Bo Chin Wang; San Lein Wu; Yu Ying Lu; Shoou Jinn Chang; Jone Fang Chen; Shih Chang Tsai; Che Hua Hsu; Chih Wei Yang; Cheng Guo Chen; Osbert Cheng; Po Chin Huang

doi:10.1109/LED.2012.2226698

Comparison of the trap behavior between ZrO₂ and HfO₂ gate stack nMOSFETs by 1/f noise and random telegraph noise

Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Osbert Cheng, Po Chin Huang

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO ₂SiO₂ and HfO₂SiO₂ dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO ₂ devices, as compared with that in HfO₂ devices, is attributed to the reduction in tunneling attenuation length and in trap density simultaneously. Experimental results showed that the trap behavior of ZrO ₂SiO₂ dielectric gate stack changes not only the trap location from a high-k layer to a SiO₂ interfacial layer but also the noise-dominated mechanism from carrier number fluctuation to the unified fluctuation model, which includes number fluctuation and correlated mobility fluctuation.

Original language	English
Article number	6392853
Pages (from-to)	151-153
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2226698
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2226698

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title = "Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise",

abstract = "Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO 2SiO2 and HfO2SiO2 dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO 2 devices, as compared with that in HfO2 devices, is attributed to the reduction in tunneling attenuation length and in trap density simultaneously. Experimental results showed that the trap behavior of ZrO 2SiO2 dielectric gate stack changes not only the trap location from a high-k layer to a SiO2 interfacial layer but also the noise-dominated mechanism from carrier number fluctuation to the unified fluctuation model, which includes number fluctuation and correlated mobility fluctuation.",

author = "Wang, {Bo Chin} and Wu, {San Lein} and Lu, {Yu Ying} and Chang, {Shoou Jinn} and Chen, {Jone Fang} and Tsai, {Shih Chang} and Hsu, {Che Hua} and Yang, {Chih Wei} and Chen, {Cheng Guo} and Osbert Cheng and Huang, {Po Chin}",

year = "2013",

doi = "10.1109/LED.2012.2226698",

language = "English",

volume = "34",

pages = "151--153",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise

AU - Wang, Bo Chin

AU - Wu, San Lein

AU - Lu, Yu Ying

AU - Chang, Shoou Jinn

AU - Chen, Jone Fang

AU - Tsai, Shih Chang

AU - Hsu, Che Hua

AU - Yang, Chih Wei

AU - Chen, Cheng Guo

AU - Cheng, Osbert

AU - Huang, Po Chin

PY - 2013

Y1 - 2013

N2 - Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO 2SiO2 and HfO2SiO2 dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO 2 devices, as compared with that in HfO2 devices, is attributed to the reduction in tunneling attenuation length and in trap density simultaneously. Experimental results showed that the trap behavior of ZrO 2SiO2 dielectric gate stack changes not only the trap location from a high-k layer to a SiO2 interfacial layer but also the noise-dominated mechanism from carrier number fluctuation to the unified fluctuation model, which includes number fluctuation and correlated mobility fluctuation.

AB - Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO 2SiO2 and HfO2SiO2 dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO 2 devices, as compared with that in HfO2 devices, is attributed to the reduction in tunneling attenuation length and in trap density simultaneously. Experimental results showed that the trap behavior of ZrO 2SiO2 dielectric gate stack changes not only the trap location from a high-k layer to a SiO2 interfacial layer but also the noise-dominated mechanism from carrier number fluctuation to the unified fluctuation model, which includes number fluctuation and correlated mobility fluctuation.

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Comparison of the trap behavior between ZrO₂ and HfO₂ gate stack nMOSFETs by 1/f noise and random telegraph noise

Abstract

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