Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Kai Hsuan Lee; Ping Chuan Chang; Shoou Jinn Chang; Yan Kuin Su; San Lein Wu; Manfred Pilkuhn

doi:10.1016/j.matchemphys.2012.03.087

Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Kai Hsuan Lee, Ping Chuan Chang, Shoou Jinn Chang, Yan Kuin Su, San Lein Wu, Manfred Pilkuhn

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

Original language	English
Pages (from-to)	899-904
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	134
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2012.03.087
Publication status	Published - 2012 Jun 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/j.matchemphys.2012.03.087

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title = "Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application",

abstract = "InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.",

author = "Lee, {Kai Hsuan} and Chang, {Ping Chuan} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Wu, {San Lein} and Manfred Pilkuhn",

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AU - Lee, Kai Hsuan

AU - Chang, Ping Chuan

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Wu, San Lein

AU - Pilkuhn, Manfred

PY - 2012/6/15

Y1 - 2012/6/15

N2 - InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

AB - InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

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JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

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ER -

Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Abstract

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