Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Kai Hsuan Lee, Ping Chuan Chang, Shoou-Jinn Chang, Yan Kuin Su, San Lein Wu, Manfred Pilkuhn

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

Original languageEnglish
Pages (from-to)899-904
Number of pages6
JournalMaterials Chemistry and Physics
Volume134
Issue number2-3
DOIs
Publication statusPublished - 2012 Jun 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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