Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Kai Hsuan Lee; Ping Chuan Chang; Shoou Jinn Chang; Yan Kuin Su; San Lein Wu; Manfred Pilkuhn

doi:10.1016/j.matchemphys.2012.03.087

Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Kai Hsuan Lee
, Ping Chuan Chang
, Shoou Jinn Chang
, Yan Kuin Su
, San Lein Wu
, Manfred Pilkuhn

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

Original language	English
Pages (from-to)	899-904
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	134
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2012.03.087
Publication status	Published - 2012 Jun 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/j.matchemphys.2012.03.087

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title = "Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application",

abstract = "InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.",

author = "Lee, \{Kai Hsuan\} and Chang, \{Ping Chuan\} and Chang, \{Shoou Jinn\} and Su, \{Yan Kuin\} and Wu, \{San Lein\} and Manfred Pilkuhn",

year = "2012",

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doi = "10.1016/j.matchemphys.2012.03.087",

language = "English",

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T1 - Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

AU - Lee, Kai Hsuan

AU - Chang, Ping Chuan

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Wu, San Lein

AU - Pilkuhn, Manfred

PY - 2012/6/15

Y1 - 2012/6/15

N2 - InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

AB - InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

UR - https://www.scopus.com/pages/publications/84861530254

UR - https://www.scopus.com/pages/publications/84861530254#tab=citedBy

U2 - 10.1016/j.matchemphys.2012.03.087

DO - 10.1016/j.matchemphys.2012.03.087

M3 - Article

AN - SCOPUS:84861530254

SN - 0254-0584

VL - 134

SP - 899

EP - 904

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Abstract

All Science Journal Classification (ASJC) codes

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