Compensating pixel circuit driving AMOLED display with a-IGZO TFTs

Chih Lung Lin, Wen Yen Chang, Chia Che Hung

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

This letter presents a novel active-matrix organic light-emitting diode (AMOLED) pixel circuit that uses amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a bottom-gate structure to compensate for the threshold voltage shift of the TFT. An a-IGZO TFT driven AMOLED display (70 × 70 pixels) on a glass substrate is fabricated and its reliability is evaluated under electrical stress.

Original languageEnglish
Article number6563159
Pages (from-to)1166-1168
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number9
DOIs
Publication statusPublished - 2013 Jul 24

Fingerprint

Zinc Oxide
Gallium
Indium
Organic light emitting diodes (OLED)
Thin film transistors
Zinc oxide
Oxide films
Pixels
Display devices
Networks (circuits)
Threshold voltage
Glass
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lin, Chih Lung ; Chang, Wen Yen ; Hung, Chia Che. / Compensating pixel circuit driving AMOLED display with a-IGZO TFTs. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 9. pp. 1166-1168.
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Compensating pixel circuit driving AMOLED display with a-IGZO TFTs. / Lin, Chih Lung; Chang, Wen Yen; Hung, Chia Che.

In: IEEE Electron Device Letters, Vol. 34, No. 9, 6563159, 24.07.2013, p. 1166-1168.

Research output: Contribution to journalArticle

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