Compliant effect of low-temperature Si buffer for SiGe growth

Y. H. Luo, J. Wan, R. L. Forrest, J. L. Liu, G. Jin, M. S. Goorsky, K. L. Wang

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Relaxed SiGe attracted much interest due to the applications for strained Si/SiGe high electron mobility transistor, metal-oxide-semiconductor field-effect transistor, heterojunction bipolar transistor, and other devices. High-quality relaxed SiGe templates, especially those with a low threading dislocation density and smooth surface, are critical for device performance. In this work, SiGe films on low-temperature Si buffer layers were grown by solid-source molecular-beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, and photoluminescence spectroscopy. It was demonstrated that, with the proper growth temperature and Si buffer thickness, the low-temperature Si buffer became tensily strained and reduced the lattice mismatch between the SiGe and the Si buffer layer. This performance is similar to that of the compliant substrate: a thin substrate that shares the mismatch strain in heteroepitaxy. Due to the smaller mismatch, misfit dislocation and threading dislocation densities were lower.

Original languageEnglish
Pages (from-to)454-456
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2001 Jan 22

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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