Composite HfO2/Al2O3-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

Ching Sung Lee; Hung Shi Huang; Wei Hsin Shung; Ting Ting Wu; Cheng Lung Yang; Chuan Chung Yeh; Yu Hao Liao; Bo Yi Chou; Han Yin Liu; Wei Chou Hsu

doi:10.1109/InfoSEEE.2014.6947770

Composite HfO₂/Al₂O₃-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

Ching Sung Lee, Hung Shi Huang, Wei Hsin Shung, Ting Ting Wu, Cheng Lung Yang, Chuan Chung Yeh, Yu Hao Liao, Bo Yi Chou, Han Yin Liu, Wei Chou Hsu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO₂/Al₂O₃ stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO₂/Al₂O₃ dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (A_V) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

Original language	English
Title of host publication	Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
Editors	Xiaohong Jiang, Shaozi Li, Ying Dai, Yun Cheng
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	769-771
Number of pages	3
ISBN (Electronic)	9781479931965
DOIs	https://doi.org/10.1109/InfoSEEE.2014.6947770
Publication status	Published - 2014 Nov 5
Event	2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan Duration: 2014 Apr 26 → 2014 Apr 28

Publication series

Name	Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
Volume	2

Other

Other	2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
Country/Territory	Japan
City	Sapporo City, Hokkaido
Period	14-04-26 → 14-04-28

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/InfoSEEE.2014.6947770

Cite this

Lee, C. S., Huang, H. S., Shung, W. H., Wu, T. T., Yang, C. L., Yeh, C. C., Liao, Y. H., Chou, B. Y., Liu, H. Y., & Hsu, W. C. (2014). Composite HfO₂/Al₂O₃-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation. In X. Jiang, S. Li, Y. Dai, & Y. Cheng (Eds.), Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 (pp. 769-771). Article 6947770 (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/InfoSEEE.2014.6947770

Lee, Ching Sung ; Huang, Hung Shi ; Shung, Wei Hsin et al. / Composite HfO₂/Al₂O₃-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation. Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. editor / Xiaohong Jiang ; Shaozi Li ; Ying Dai ; Yun Cheng. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 769-771 (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014).

@inproceedings{f5de0f84308246d694c5856b8701a62c,

title = "Composite HfO2/Al2O3-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation",

abstract = "Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO2/Al2O3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO2/Al2O3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (AV) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.",

author = "Lee, {Ching Sung} and Huang, {Hung Shi} and Shung, {Wei Hsin} and Wu, {Ting Ting} and Yang, {Cheng Lung} and Yeh, {Chuan Chung} and Liao, {Yu Hao} and Chou, {Bo Yi} and Liu, {Han Yin} and Hsu, {Wei Chou}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 ; Conference date: 26-04-2014 Through 28-04-2014",

year = "2014",

month = nov,

day = "5",

doi = "10.1109/InfoSEEE.2014.6947770",

language = "English",

series = "Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "769--771",

editor = "Xiaohong Jiang and Shaozi Li and Ying Dai and Yun Cheng",

booktitle = "Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014",

address = "United States",

}

Lee, CS, Huang, HS, Shung, WH, Wu, TT, Yang, CL, Yeh, CC, Liao, YH, Chou, BY, Liu, HY & Hsu, WC 2014, Composite HfO₂/Al₂O₃-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation. in X Jiang, S Li, Y Dai & Y Cheng (eds), Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014., 6947770, Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 769-771, 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014, Sapporo City, Hokkaido, Japan, 14-04-26. https://doi.org/10.1109/InfoSEEE.2014.6947770

Composite HfO₂/Al₂O₃-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation. / Lee, Ching Sung; Huang, Hung Shi; Shung, Wei Hsin et al.
Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. ed. / Xiaohong Jiang; Shaozi Li; Ying Dai; Yun Cheng. Institute of Electrical and Electronics Engineers Inc., 2014. p. 769-771 6947770 (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Composite HfO2/Al2O3-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

AU - Lee, Ching Sung

AU - Huang, Hung Shi

AU - Shung, Wei Hsin

AU - Wu, Ting Ting

AU - Yang, Cheng Lung

AU - Yeh, Chuan Chung

AU - Liao, Yu Hao

AU - Chou, Bo Yi

AU - Liu, Han Yin

AU - Hsu, Wei Chou

PY - 2014/11/5

Y1 - 2014/11/5

N2 - Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO2/Al2O3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO2/Al2O3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (AV) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

AB - Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO2/Al2O3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO2/Al2O3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (AV) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

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M3 - Conference contribution

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SP - 769

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BT - Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014

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PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 26 April 2014 through 28 April 2014

ER -

Lee CS, Huang HS, Shung WH, Wu TT, Yang CL, Yeh CC et al. Composite HfO₂/Al₂O₃-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation. In Jiang X, Li S, Dai Y, Cheng Y, editors, Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 769-771. 6947770. (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014). doi: 10.1109/InfoSEEE.2014.6947770