Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

Ching Sung Lee, Hung Shi Huang, Wei Hsin Shung, Ting Ting Wu, Cheng Lung Yang, Chuan Chung Yeh, Yu Hao Liao, Bo Yi Chou, Han Yin Liu, Wei-Chou Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO 2 /Al 2 O 3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO 2 /Al 2 O 3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (A V ) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

Original languageEnglish
Title of host publicationProceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
EditorsXiaohong Jiang, Shaozi Li, Yun Cheng, Ying Dai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages769-771
Number of pages3
ISBN (Electronic)9781479931965
DOIs
Publication statusPublished - 2014 Nov 5
Event2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
Duration: 2014 Apr 262014 Apr 28

Publication series

NameProceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
Volume2

Other

Other2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
CountryJapan
CitySapporo City, Hokkaido
Period14-04-2614-04-28

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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