TY - JOUR
T1 - Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation
AU - Lee, Ching Sung
AU - Liao, Yu Hao
AU - Chou, Bo Yi
AU - Liu, Han Yin
AU - Hsu, Wei Chou
N1 - Funding Information:
This work was supported by the National Science Council of the Republic of China under Contract No. NSC 102-2221-E-035-084.
PY - 2014/8
Y1 - 2014/8
N2 - Composite HfO2/Al2O3-dielectric In 0.2Ga0.8As/Al0.24Ga0.76As metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using RF sputtering/ozone water oxidization, respectively, are investigated. In comparison with a conventional Schottky-gate device on the same epitaxial structure, an Al2O3 liner was chemically formed for the present MOS-HEMT to improve interfacial quality and decrease gate leakages. Moreover, a high-k HfO2 layer was further deposited on the Al 2O3 liner to enhance the gate modulation capability. The present MOS-HEMT with the devised HfO2/Al2O3 dielectric stack has demonstrated excellent switching characteristics, including superior subthreshold slope (S.S.) of 70 mV/dec and high drain-source current (IDS) on-off ratio of up to 6 orders. Improved direct-current (DC), radio-frequency (RF), and high-temperature device performances of the present design are also comprehensively studied in this work.
AB - Composite HfO2/Al2O3-dielectric In 0.2Ga0.8As/Al0.24Ga0.76As metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using RF sputtering/ozone water oxidization, respectively, are investigated. In comparison with a conventional Schottky-gate device on the same epitaxial structure, an Al2O3 liner was chemically formed for the present MOS-HEMT to improve interfacial quality and decrease gate leakages. Moreover, a high-k HfO2 layer was further deposited on the Al 2O3 liner to enhance the gate modulation capability. The present MOS-HEMT with the devised HfO2/Al2O3 dielectric stack has demonstrated excellent switching characteristics, including superior subthreshold slope (S.S.) of 70 mV/dec and high drain-source current (IDS) on-off ratio of up to 6 orders. Improved direct-current (DC), radio-frequency (RF), and high-temperature device performances of the present design are also comprehensively studied in this work.
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U2 - 10.1016/j.spmi.2014.04.016
DO - 10.1016/j.spmi.2014.04.016
M3 - Article
AN - SCOPUS:84901013831
SN - 0749-6036
VL - 72
SP - 194
EP - 203
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
ER -