Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor

Yan Ying Tsai; Kun Wei Lin; Huey Ing Chen; Ching Wen Hung; Tzu Pin Chen; Wen Chau Liu

doi:10.1063/1.2749439

Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor

Yan Ying Tsai, Kun Wei Lin, Huey Ing Chen, Ching Wen Hung, Tzu Pin Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The electric and hydrogen sensing properties of an interesting Pd-gate metal-semiconductor-type high electron mobility transistor are comprehensively studied. The dipolar layer formed by adsorbed hydrogen atoms at the semiconductor of Pd-AlGaAs interface is equivalent to a two-dimensional layer. The concentration of available hydrogen adsorption sites at the metal-semiconductor interface n¡ and the effective distance d from, the Pd-AlGaAs interface to adsorbed hydrogen atoms are 9.5 × 10¹³ cm^-2 and 3 Å, respectively. Furthermore, the simulated curves are in excellently agreement with the experimental results.

Original language	English
Article number	253503
Journal	Applied Physics Letters
Volume	90
Issue number	25
DOIs	https://doi.org/10.1063/1.2749439
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2749439

Cite this

@article{c94ed8f90d3d4a96b699df672d2745d9,

title = "Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor",

abstract = "The electric and hydrogen sensing properties of an interesting Pd-gate metal-semiconductor-type high electron mobility transistor are comprehensively studied. The dipolar layer formed by adsorbed hydrogen atoms at the semiconductor of Pd-AlGaAs interface is equivalent to a two-dimensional layer. The concentration of available hydrogen adsorption sites at the metal-semiconductor interface n¡ and the effective distance d from, the Pd-AlGaAs interface to adsorbed hydrogen atoms are 9.5 × 1013 cm-2 and 3 {\AA}, respectively. Furthermore, the simulated curves are in excellently agreement with the experimental results.",

author = "Tsai, {Yan Ying} and Lin, {Kun Wei} and Chen, {Huey Ing} and Hung, {Ching Wen} and Chen, {Tzu Pin} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 93-2215-E-006-002. Also, this work made use of Shared Facilities supported by the Program of Top 100 Universities Advancement, Ministry of Education, Taiwan. In addition, the authors were grateful to the National Center for High-Performance Computing for computer time and facilities.",

year = "2007",

doi = "10.1063/1.2749439",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Hung, Ching Wen

AU - Chen, Tzu Pin

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 93-2215-E-006-002. Also, this work made use of Shared Facilities supported by the Program of Top 100 Universities Advancement, Ministry of Education, Taiwan. In addition, the authors were grateful to the National Center for High-Performance Computing for computer time and facilities.

PY - 2007

Y1 - 2007

N2 - The electric and hydrogen sensing properties of an interesting Pd-gate metal-semiconductor-type high electron mobility transistor are comprehensively studied. The dipolar layer formed by adsorbed hydrogen atoms at the semiconductor of Pd-AlGaAs interface is equivalent to a two-dimensional layer. The concentration of available hydrogen adsorption sites at the metal-semiconductor interface n¡ and the effective distance d from, the Pd-AlGaAs interface to adsorbed hydrogen atoms are 9.5 × 1013 cm-2 and 3 Å, respectively. Furthermore, the simulated curves are in excellently agreement with the experimental results.

AB - The electric and hydrogen sensing properties of an interesting Pd-gate metal-semiconductor-type high electron mobility transistor are comprehensively studied. The dipolar layer formed by adsorbed hydrogen atoms at the semiconductor of Pd-AlGaAs interface is equivalent to a two-dimensional layer. The concentration of available hydrogen adsorption sites at the metal-semiconductor interface n¡ and the effective distance d from, the Pd-AlGaAs interface to adsorbed hydrogen atoms are 9.5 × 1013 cm-2 and 3 Å, respectively. Furthermore, the simulated curves are in excellently agreement with the experimental results.

UR - http://www.scopus.com/inward/record.url?scp=34547276864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547276864&partnerID=8YFLogxK

U2 - 10.1063/1.2749439

DO - 10.1063/1.2749439

M3 - Article

AN - SCOPUS:34547276864

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253503

ER -

Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this