Comprehensive analysis of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with different thickness of setback layers

Shiou Ying Cheng, Chun Yuan Chen, Jing Yuh Chen, Hung Ming Chuang, Wen Chau Liu, Wen Lung Chang, Hsi Jen Pan, Pao Chuan Chen

Research output: Contribution to journalConference article

Abstract

We specifically studied the influence of a setback-layer thickness on the device performances so as to optimize the required value. Theoretical analysis shows that an optimized setback-layer thickness is available to effectively reduce the barrier height while maintain good device performances. In this work, the effects of a setback-layer thickness on the DC and RF performances of an InGaP/GaAs heterojunction bipolar transistor (HBT) are investigated. Based on the theoretical analysis, the optimized setback-layer thickness WSB is about of 10-30Å for analog amplification. On the other hand, for digital saturated logic application, i.e., a small offset voltage with an acceptable current gain, the optimized WSB could be up to 50 Å. Therefore, this analysis and predication may cause the considerable promise for practical circuit applications.

Original languageEnglish
Pages (from-to)384-391
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5276
DOIs
Publication statusPublished - 2004 Jun 1
EventDevice and Process Technologies for MEMS, Microelectronics, and Photonics III - Perth, WA, Australia
Duration: 2003 Dec 102003 Dec 12

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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