AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si substrates with TiO2 gate dielectrics are fabricated. The dc and power characteristics of AlGaN/GaN MOS-HEMTs are compared with that of metal-gate HEMTs fabricated on the same material. The gate leakage current for the MOS-HFET is more than two orders of magnitude smaller than for the HEMT at 300 K. The high-speed performance potential of the MOS-HEMT with an fT = 10.44 GHz and an fmax = 13.8 GHz is confirmed. The MOS-HEMT shows higher extrinsic transconductance, breakdown voltage, high-frequency and power characteristics relative to the HEMT. Furthermore, experimental results reveal that this studied MOS-HEMT is feasible for use at high temperatures.
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2017 Jan 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics