Comprehensive characterization of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with TiO2 gate dielectric

Yu Shyan Lin, Chi Che Lu, Wei Chou Hsu

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1 Citation (Scopus)

Abstract

AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si substrates with TiO2 gate dielectrics are fabricated. The dc and power characteristics of AlGaN/GaN MOS-HEMTs are compared with that of metal-gate HEMTs fabricated on the same material. The gate leakage current for the MOS-HFET is more than two orders of magnitude smaller than for the HEMT at 300 K. The high-speed performance potential of the MOS-HEMT with an fT = 10.44 GHz and an fmax = 13.8 GHz is confirmed. The MOS-HEMT shows higher extrinsic transconductance, breakdown voltage, high-frequency and power characteristics relative to the HEMT. Furthermore, experimental results reveal that this studied MOS-HEMT is feasible for use at high temperatures.

Original languageEnglish
Article number1600227
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume14
Issue number1-2
DOIs
Publication statusPublished - 2017 Jan 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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