Comprehensive investigation of hydrogen-sensing properties of Pt/InAlP-based Schottky diodes

Yan Ying Tsai, Ching Wen Hung, Ssu I. Fu, Po Hsien Lai, Hung Chi Chang, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Interesting hydrogen-sensing properties of catalytic Pt/In0.5Al0.5P metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are comprehensively studied and compared. The effects of hydrogen adsorption are investigated on the device performance such as the current-voltage characteristics, relative sensitivity ratio, Schottky barrier height variation, and built-in electric field. Experimentally, both the hydrogen sensors can be operated systematically under bi-polarity biases. The detecting sensitivity of the MOS-type hydrogen sensor is superior to that of the MS-type. It is believed that a high-quality oxide layer effectively increases the amount of hydrogen atoms adsorbed. Also, the hydrogen effects are found on both the Schottky barrier height lowering and the modulation in the electric field at the Pt-oxide and Pt-InAlP interfaces. In addition, the influence of the oxygen partial pressure in synthetic air and the existence of an oxygen layer between the Pt metal and the InAlP material are also studied.

Original languageEnglish
Pages (from-to)535-541
Number of pages7
JournalSensors and Actuators, B: Chemical
Issue number2
Publication statusPublished - 2007 Jun 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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