Comprehensive investigation on emitter ledge length of InGaPGaAs heterojunction bipolar transistors

Ssu I. Fu, Rong Chau Liu, Shiou Ying Cheng, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Tzu Pin Chen, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The influence of emitter ledge length on the performance of InGaPGaAs heterojunction bipolar transistors is comprehensively investigated. Due to the band-bending effect at the intersection of the emitter ledge edge with the exposed base surface, an undesired potential saddle point is formed. Moreover, emitter ledge passivations that are longer or shorter than an optimal length result in the deterioration of device performance. Based on the theoretical analysis and experimental results, the surface recombination effect of the device with an emitter ledge length of 0.8 μm is negligible compared with the unpassivated device. Also, the device with the emitter ledge length of 0.8 μm shows nearly the best dc characteristics and acceptable rf performance. Therefore, the optimum emitter ledge length in this study is near 0.8 μm.

Original languageEnglish
Pages (from-to)691-696
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number3
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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