Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers

Shiou Ying Cheng, Chun Yuan Chen, Jing Yuh Chen, Wen Chau Liu, Wen Lung Chang, Meng Hsueh Chiang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The performances of InGaP/GaAs heterostructure bipolar transistors (HBTs) with different thickness of setback layers are theoretically studied. The appropriate thickness of the setback layer is an important factor in high-speed HBTs. In this work, it is found that the HBT device with a 60-90 Å setback layer has better DC and RF characteristics due to the absence of potential spike and reduced transit time. In addition, the studied devices with appropriate setback layer thickness have lower offset voltage, reverse saturation voltage, and base and collector current ideality factor.

Original languageEnglish
Pages (from-to)171-183
Number of pages13
JournalSuperlattices and Microstructures
Volume37
Issue number3
DOIs
Publication statusPublished - 2005 Mar 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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