Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers

Shiou Ying Cheng; Chun Yuan Chen; Jing Yuh Chen; Wen Chau Liu; Wen Lung Chang; Meng Hsueh Chiang

doi:10.1016/j.spmi.2004.11.003

Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers

Shiou Ying Cheng, Chun Yuan Chen, Jing Yuh Chen, Wen Chau Liu, Wen Lung Chang, Meng Hsueh Chiang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The performances of InGaP/GaAs heterostructure bipolar transistors (HBTs) with different thickness of setback layers are theoretically studied. The appropriate thickness of the setback layer is an important factor in high-speed HBTs. In this work, it is found that the HBT device with a 60-90 Å setback layer has better DC and RF characteristics due to the absence of potential spike and reduced transit time. In addition, the studied devices with appropriate setback layer thickness have lower offset voltage, reverse saturation voltage, and base and collector current ideality factor.

Original language	English
Pages (from-to)	171-183
Number of pages	13
Journal	Superlattices and Microstructures
Volume	37
Issue number	3
DOIs	https://doi.org/10.1016/j.spmi.2004.11.003
Publication status	Published - 2005 Mar

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2004.11.003

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@article{122b99ff2b5e49d190879f839403c5d7,

title = "Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers",

abstract = "The performances of InGaP/GaAs heterostructure bipolar transistors (HBTs) with different thickness of setback layers are theoretically studied. The appropriate thickness of the setback layer is an important factor in high-speed HBTs. In this work, it is found that the HBT device with a 60-90 {\AA} setback layer has better DC and RF characteristics due to the absence of potential spike and reduced transit time. In addition, the studied devices with appropriate setback layer thickness have lower offset voltage, reverse saturation voltage, and base and collector current ideality factor.",

author = "Cheng, {Shiou Ying} and Chen, {Chun Yuan} and Chen, {Jing Yuh} and Liu, {Wen Chau} and Chang, {Wen Lung} and Chiang, {Meng Hsueh}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 93-2215-E197-003 and No. NSC 93-2215-E006-002.",

year = "2005",

month = mar,

doi = "10.1016/j.spmi.2004.11.003",

language = "English",

volume = "37",

pages = "171--183",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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TY - JOUR

T1 - Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers

AU - Cheng, Shiou Ying

AU - Chen, Chun Yuan

AU - Chen, Jing Yuh

AU - Liu, Wen Chau

AU - Chang, Wen Lung

AU - Chiang, Meng Hsueh

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 93-2215-E197-003 and No. NSC 93-2215-E006-002.

PY - 2005/3

Y1 - 2005/3

N2 - The performances of InGaP/GaAs heterostructure bipolar transistors (HBTs) with different thickness of setback layers are theoretically studied. The appropriate thickness of the setback layer is an important factor in high-speed HBTs. In this work, it is found that the HBT device with a 60-90 Å setback layer has better DC and RF characteristics due to the absence of potential spike and reduced transit time. In addition, the studied devices with appropriate setback layer thickness have lower offset voltage, reverse saturation voltage, and base and collector current ideality factor.

AB - The performances of InGaP/GaAs heterostructure bipolar transistors (HBTs) with different thickness of setback layers are theoretically studied. The appropriate thickness of the setback layer is an important factor in high-speed HBTs. In this work, it is found that the HBT device with a 60-90 Å setback layer has better DC and RF characteristics due to the absence of potential spike and reduced transit time. In addition, the studied devices with appropriate setback layer thickness have lower offset voltage, reverse saturation voltage, and base and collector current ideality factor.

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DO - 10.1016/j.spmi.2004.11.003

M3 - Article

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SN - 0749-6036

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers

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