Comprehensive study of a Pd/Al0.24Ga0.76As-based field-effect-transistor-type hydrogen sensor

Yan Ying Tsai, Kun Wei Lin, Huey-Ing Chen, Ching Wen Hung, Tzu Pin Chen, Tsung Han Tsai, Li Yang Chen, Kuei Yi Chu, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

An interesting Pd/Al0.24Ga0.76As-based field-effect-transistor-type hydrogen detector is fabricated and studied. The corresponding electronic and hydrogen sensing properties are measured and investigated. Based on the measured results, a hydrogen sensing model is developed. Theoretically, the dipolar layer formed by the hydrogen atoms adsorbed at the Pd-AlGaAs interface can be considered as a two-dimensional layer. Under the 980 ppm H2/air environment, the concentration of hydrogen adsorption sites available at the metal-semiconductor interface, ni, and the effective distance, d, from the Pd-AlGaAs interface to adsorbed hydrogen atoms are 9.5 × 1013 cm-2 and 3 Å, respectively. The simulated curves show excellent agreement with experimental results. In addition, an anomalous decrease phenomenon in transient response is observed which may be caused by the formation of hydroxyl species and water.

Original languageEnglish
Pages (from-to)128-134
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume133
Issue number1
DOIs
Publication statusPublished - 2008 Jul 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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