Comprehensive study of adsorption kinetics for hydrogen sensing with an electroless-plated Pd-InP Schottky diode

Huey-Ing Chen, Yen I. Chou, Chieh Kang Hsiung

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48 Citations (Scopus)

Abstract

In this work, a comprehensive adsorption model for hydrogen detection with an electroless-plated Pd-InP Schottky diode is proposed. The hydrogen adsorption reaction enthalpy (ΔH°) and entropy (ΔS°) are estimated as -44.1 kJ mol-1 and -125.5 J mol-1 K-1, respectively, based on the steady-state analysis. It is therefore unfavorable for hydrogen detection at high temperature. From kinetic analysis, the activation energy (Ea) for hydrogen adsorption is determined as 12.1 kJ mol-1, which is smaller than those obtained from Pd-GaAs and Pt-GaAs diodes. Based on these results, the hydrogen adsorption rate of Pd-semiconductor diode is strongly influenced by the nature of semiconductor substrate.

Original languageEnglish
Pages (from-to)6-16
Number of pages11
JournalSensors and Actuators, B: Chemical
Volume92
Issue number1-2
DOIs
Publication statusPublished - 2003 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry
  • Electrical and Electronic Engineering

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