In this work, a comprehensive adsorption model for hydrogen detection with an electroless-plated Pd-InP Schottky diode is proposed. The hydrogen adsorption reaction enthalpy (ΔH°) and entropy (ΔS°) are estimated as -44.1 kJ mol-1 and -125.5 J mol-1 K-1, respectively, based on the steady-state analysis. It is therefore unfavorable for hydrogen detection at high temperature. From kinetic analysis, the activation energy (Ea) for hydrogen adsorption is determined as 12.1 kJ mol-1, which is smaller than those obtained from Pd-GaAs and Pt-GaAs diodes. Based on these results, the hydrogen adsorption rate of Pd-semiconductor diode is strongly influenced by the nature of semiconductor substrate.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
- Electrical and Electronic Engineering