TY - JOUR
T1 - Comprehensive study of adsorption kinetics for hydrogen sensing with an electroless-plated Pd-InP Schottky diode
AU - Chen, Huey Ing
AU - Chou, Yen I.
AU - Hsiung, Chieh Kang
N1 - Funding Information:
The authors would like to thank Prof. W.C. Liu, Institute of Microelectronics, Department of Electric Engineering, NCKU, Taiwan, for his helpful discussion. Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC91-2214-E006-017, to which the authors also wish to express their thanks.
Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2003/7/1
Y1 - 2003/7/1
N2 - In this work, a comprehensive adsorption model for hydrogen detection with an electroless-plated Pd-InP Schottky diode is proposed. The hydrogen adsorption reaction enthalpy (ΔH°) and entropy (ΔS°) are estimated as -44.1 kJ mol-1 and -125.5 J mol-1 K-1, respectively, based on the steady-state analysis. It is therefore unfavorable for hydrogen detection at high temperature. From kinetic analysis, the activation energy (Ea) for hydrogen adsorption is determined as 12.1 kJ mol-1, which is smaller than those obtained from Pd-GaAs and Pt-GaAs diodes. Based on these results, the hydrogen adsorption rate of Pd-semiconductor diode is strongly influenced by the nature of semiconductor substrate.
AB - In this work, a comprehensive adsorption model for hydrogen detection with an electroless-plated Pd-InP Schottky diode is proposed. The hydrogen adsorption reaction enthalpy (ΔH°) and entropy (ΔS°) are estimated as -44.1 kJ mol-1 and -125.5 J mol-1 K-1, respectively, based on the steady-state analysis. It is therefore unfavorable for hydrogen detection at high temperature. From kinetic analysis, the activation energy (Ea) for hydrogen adsorption is determined as 12.1 kJ mol-1, which is smaller than those obtained from Pd-GaAs and Pt-GaAs diodes. Based on these results, the hydrogen adsorption rate of Pd-semiconductor diode is strongly influenced by the nature of semiconductor substrate.
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U2 - 10.1016/S0925-4005(03)00125-4
DO - 10.1016/S0925-4005(03)00125-4
M3 - Article
AN - SCOPUS:0037911450
VL - 92
SP - 6
EP - 16
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
SN - 0925-4005
IS - 1-2
ER -