Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs

Ssu I. Fu; Shiou Ying Cheng; Tzu Pin Chen; Po Hsien Lai; Yan Ying Tsai; Ching Wen Hung; Chih Hung Yen; Wen Chau Liu

doi:10.1109/TED.2006.883943

Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs

Ssu I. Fu, Shiou Ying Cheng, Tzu Pin Chen, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Chih Hung Yen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A comprehensive study of emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistors (HBTs) has been undertaken. It is shown that the recombination rate and electron densities are drastically increased near the exposed base surface between the base contact and the emitter ledge. In contrast, the corresponding hole densities are decreased. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of the emitter ledge is a crucial issue and should be carefully considered. It is shown that, from simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is 100-200 Å.

Original language	English
Pages (from-to)	2689-2695
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	11
DOIs	https://doi.org/10.1109/TED.2006.883943
Publication status	Published - 2006 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2006.883943

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@article{aa9344a753f34d928b22172a392d0bf9,

title = "Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs",

abstract = "A comprehensive study of emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistors (HBTs) has been undertaken. It is shown that the recombination rate and electron densities are drastically increased near the exposed base surface between the base contact and the emitter ledge. In contrast, the corresponding hole densities are decreased. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of the emitter ledge is a crucial issue and should be carefully considered. It is shown that, from simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is 100-200 {\AA}.",

author = "Fu, {Ssu I.} and Cheng, {Shiou Ying} and Chen, {Tzu Pin} and Lai, {Po Hsien} and Tsai, {Yan Ying} and Hung, {Ching Wen} and Yen, {Chih Hung} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received March 7, 2006; revised June 14, 2006. This work was supported in part by the National Science Council of the Republic of China under Contract NSC 95-2221-E006-434-MY2 and NSC 95-2221-E197-022. The review of this paper was arranged by Editor Y.-J. Chan.",

year = "2006",

month = nov,

doi = "10.1109/TED.2006.883943",

language = "English",

volume = "53",

pages = "2689--2695",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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T1 - Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs

AU - Fu, Ssu I.

AU - Cheng, Shiou Ying

AU - Chen, Tzu Pin

AU - Lai, Po Hsien

AU - Tsai, Yan Ying

AU - Hung, Ching Wen

AU - Yen, Chih Hung

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received March 7, 2006; revised June 14, 2006. This work was supported in part by the National Science Council of the Republic of China under Contract NSC 95-2221-E006-434-MY2 and NSC 95-2221-E197-022. The review of this paper was arranged by Editor Y.-J. Chan.

PY - 2006/11

Y1 - 2006/11

N2 - A comprehensive study of emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistors (HBTs) has been undertaken. It is shown that the recombination rate and electron densities are drastically increased near the exposed base surface between the base contact and the emitter ledge. In contrast, the corresponding hole densities are decreased. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of the emitter ledge is a crucial issue and should be carefully considered. It is shown that, from simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is 100-200 Å.

AB - A comprehensive study of emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistors (HBTs) has been undertaken. It is shown that the recombination rate and electron densities are drastically increased near the exposed base surface between the base contact and the emitter ledge. In contrast, the corresponding hole densities are decreased. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of the emitter ledge is a crucial issue and should be carefully considered. It is shown that, from simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is 100-200 Å.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs

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