Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers

Yan Ying Tsai, Chin Chuan Cheng, Po Hsien Lai, Ssu I. Fu, Ching Wen Hong, Huey Ing Chen, Wen Chau Liu

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10 Citations (Scopus)

Abstract

The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.

Original languageEnglish
Pages (from-to)687-693
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume120
Issue number2
DOIs
Publication statusPublished - 2007 Jan 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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