Abstract
The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.
| Original language | English |
|---|---|
| Pages (from-to) | 687-693 |
| Number of pages | 7 |
| Journal | Sensors and Actuators, B: Chemical |
| Volume | 120 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 Jan 10 |
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All Science Journal Classification (ASJC) codes
- Analytical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering
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Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers. / Tsai, Yan Ying; Cheng, Chin Chuan; Lai, Po Hsien; Fu, Ssu I.; Hong, Ching Wen; Chen, Huey-Ing; Liu, Wen-Chau.
In: Sensors and Actuators, B: Chemical, Vol. 120, No. 2, 10.01.2007, p. 687-693.Research output: Contribution to journal › Article
TY - JOUR
T1 - Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers
AU - Tsai, Yan Ying
AU - Cheng, Chin Chuan
AU - Lai, Po Hsien
AU - Fu, Ssu I.
AU - Hong, Ching Wen
AU - Chen, Huey-Ing
AU - Liu, Wen-Chau
PY - 2007/1/10
Y1 - 2007/1/10
N2 - The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.
AB - The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.
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UR - http://www.scopus.com/inward/citedby.url?scp=33845608435&partnerID=8YFLogxK
U2 - 10.1016/j.snb.2006.03.035
DO - 10.1016/j.snb.2006.03.035
M3 - Article
VL - 120
SP - 687
EP - 693
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
SN - 0925-4005
IS - 2
ER -