Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers

Yan Ying Tsai, Chin Chuan Cheng, Po Hsien Lai, Ssu I. Fu, Ching Wen Hong, Huey-Ing Chen, Wen-Chau Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.

Original languageEnglish
Pages (from-to)687-693
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume120
Issue number2
DOIs
Publication statusPublished - 2007 Jan 10

Fingerprint

metal oxide semiconductors
Hydrogen
electric contacts
Transistors
transistors
Metals
hydrogen
Air
Temperature
Sensor arrays
air
Oxide semiconductors
Adsorption
high current
low concentrations
Substrates
adsorption
temperature
sensors
room temperature

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

@article{5b6d67a5ad5a4b55b31e9244f6bdd192,
title = "Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers",
abstract = "The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.",
author = "Tsai, {Yan Ying} and Cheng, {Chin Chuan} and Lai, {Po Hsien} and Fu, {Ssu I.} and Hong, {Ching Wen} and Huey-Ing Chen and Wen-Chau Liu",
year = "2007",
month = "1",
day = "10",
doi = "10.1016/j.snb.2006.03.035",
language = "English",
volume = "120",
pages = "687--693",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "2",

}

Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers. / Tsai, Yan Ying; Cheng, Chin Chuan; Lai, Po Hsien; Fu, Ssu I.; Hong, Ching Wen; Chen, Huey-Ing; Liu, Wen-Chau.

In: Sensors and Actuators, B: Chemical, Vol. 120, No. 2, 10.01.2007, p. 687-693.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers

AU - Tsai, Yan Ying

AU - Cheng, Chin Chuan

AU - Lai, Po Hsien

AU - Fu, Ssu I.

AU - Hong, Ching Wen

AU - Chen, Huey-Ing

AU - Liu, Wen-Chau

PY - 2007/1/10

Y1 - 2007/1/10

N2 - The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.

AB - The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.

UR - http://www.scopus.com/inward/record.url?scp=33845608435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845608435&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2006.03.035

DO - 10.1016/j.snb.2006.03.035

M3 - Article

VL - 120

SP - 687

EP - 693

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 2

ER -