Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers

Yan Ying Tsai; Chin Chuan Cheng; Po Hsien Lai; Ssu I. Fu; Ching Wen Hong; Huey Ing Chen; Wen Chau Liu

doi:10.1016/j.snb.2006.03.035

Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al_0.24Ga_0.76As and In_0.49Ga_0.51P Schottky contact layers

Yan Ying Tsai, Chin Chuan Cheng, Po Hsien Lai, Ssu I. Fu, Ching Wen Hong, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The interesting hydrogen sensing characteristics of two transistors with an Al_0.24Ga_0.76As (device A) and In_0.49Ga_0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H₂/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H₂/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H₂/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al_0.24Ga_0.76As and In_0.49Ga_0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.

Original language	English
Pages (from-to)	687-693
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	120
Issue number	2
DOIs	https://doi.org/10.1016/j.snb.2006.03.035
Publication status	Published - 2007 Jan 10

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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@article{5b6d67a5ad5a4b55b31e9244f6bdd192,

title = "Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers",

abstract = "The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.",

author = "Tsai, {Yan Ying} and Cheng, {Chin Chuan} and Lai, {Po Hsien} and Fu, {Ssu I.} and Hong, {Ching Wen} and Chen, {Huey Ing} and Liu, {Wen Chau}",

year = "2007",

month = jan,

day = "10",

doi = "10.1016/j.snb.2006.03.035",

language = "English",

volume = "120",

pages = "687--693",

journal = "Sensors and Actuators, B: Chemical",

issn = "0925-4005",

publisher = "Elsevier",

number = "2",

}

Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al_0.24Ga_0.76As and In_0.49Ga_0.51P Schottky contact layers. / Tsai, Yan Ying; Cheng, Chin Chuan; Lai, Po Hsien; Fu, Ssu I.; Hong, Ching Wen; Chen, Huey Ing; Liu, Wen Chau.

In: Sensors and Actuators, B: Chemical, Vol. 120, No. 2, 10.01.2007, p. 687-693.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers

AU - Tsai, Yan Ying

AU - Cheng, Chin Chuan

AU - Lai, Po Hsien

AU - Fu, Ssu I.

AU - Hong, Ching Wen

AU - Chen, Huey Ing

AU - Liu, Wen Chau

PY - 2007/1/10

Y1 - 2007/1/10

N2 - The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.

AB - The interesting hydrogen sensing characteristics of two transistors with an Al0.24Ga0.76As (device A) and In0.49Ga0.51P (device B) Schottky layer are demonstrated and studied. Experimentally, device A shows a lower hydrogen detection limit of 4.3 ppm H2/air, a higher current variation of 7.79 mA and a shorter adsorption time of 10.95 s in a 9970 ppm H2/air at room temperature. On the other hand, device B exhibits more stable hydrogen-sensing characteristics at high temperatures. Even at a low concentration of 14 ppm H2/air the hydrogen sensing properties of device B can be obtained as the temperature increases from 30 to 160 °C. Because the Al0.24Ga0.76As and In0.49Ga0.51P materials are lattice-matched to the GaAs substrate, the studied devices can be integrated as sensor arrays to obtain superior hydrogen sensing characteristics including higher sensing signals, lower detection limit, shorter response time, and widespread detection and temperature regimes.

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