Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Chien Chang Huang, Huey Ing Chen, I. Ping Liu, Chun Chia Chen, Po Cheng Chou, Jian Kai Liou, Wen Chau Liu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) type hydrogen sensor, with sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and investigated. Based on sensitization and activation processes, the dense and uniform Pd layer exhibits small grain size (38.14 ± 7.24 nm) and less surface roughness in gate region. Experimentally, for a 1 μm gate-length HFET device, advantages of lower temperature-dependent variation of the maximum drain saturation current (-0.52 mA/mm K), maximum extrinsic transconductance (-0.13 mS/mm K), and threshold voltage (-1.05 mV/K) are obtained over the temperature range from 300 to 600 K. For three-terminal-controlled hydrogen gas sensing phenomena, a high current variation of 34.9 mA/mm is found in a 1% H2/air gas at 375 K. The exothermic hydrogen adsorption reaction with the enthalpy and entropy of -45.3 kJ mol-1 and -118.2 J mol-1 K-1, respectively, are obtained. Furthermore, the response analysis reveals that the initial response rate is significantly increased with the hydrogen concentration and temperature. The related activation energy for hydrogen adsorption is about 11.65 kJ mol-1.

Original languageEnglish
Pages (from-to)913-921
Number of pages9
JournalSensors and Actuators, B: Chemical
Volume190
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Electroless plating
High electron mobility transistors
plating
Hydrogen
field effect transistors
hydrogen
Gases
Chemical activation
activation
Adsorption
adsorption
Transconductance
transconductance
Threshold voltage
gases
threshold voltage
Temperature
high current
Enthalpy
surface roughness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{c3a8921672a24464853e55da46b1dd26,
title = "Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)",
abstract = "A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) type hydrogen sensor, with sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and investigated. Based on sensitization and activation processes, the dense and uniform Pd layer exhibits small grain size (38.14 ± 7.24 nm) and less surface roughness in gate region. Experimentally, for a 1 μm gate-length HFET device, advantages of lower temperature-dependent variation of the maximum drain saturation current (-0.52 mA/mm K), maximum extrinsic transconductance (-0.13 mS/mm K), and threshold voltage (-1.05 mV/K) are obtained over the temperature range from 300 to 600 K. For three-terminal-controlled hydrogen gas sensing phenomena, a high current variation of 34.9 mA/mm is found in a 1{\%} H2/air gas at 375 K. The exothermic hydrogen adsorption reaction with the enthalpy and entropy of -45.3 kJ mol-1 and -118.2 J mol-1 K-1, respectively, are obtained. Furthermore, the response analysis reveals that the initial response rate is significantly increased with the hydrogen concentration and temperature. The related activation energy for hydrogen adsorption is about 11.65 kJ mol-1.",
author = "Huang, {Chien Chang} and Chen, {Huey Ing} and Liu, {I. Ping} and Chen, {Chun Chia} and Chou, {Po Cheng} and Liou, {Jian Kai} and Liu, {Wen Chau}",
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Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET). / Huang, Chien Chang; Chen, Huey Ing; Liu, I. Ping; Chen, Chun Chia; Chou, Po Cheng; Liou, Jian Kai; Liu, Wen Chau.

In: Sensors and Actuators, B: Chemical, Vol. 190, 01.01.2014, p. 913-921.

Research output: Contribution to journalArticle

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T1 - Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

AU - Huang, Chien Chang

AU - Chen, Huey Ing

AU - Liu, I. Ping

AU - Chen, Chun Chia

AU - Chou, Po Cheng

AU - Liou, Jian Kai

AU - Liu, Wen Chau

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N2 - A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) type hydrogen sensor, with sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and investigated. Based on sensitization and activation processes, the dense and uniform Pd layer exhibits small grain size (38.14 ± 7.24 nm) and less surface roughness in gate region. Experimentally, for a 1 μm gate-length HFET device, advantages of lower temperature-dependent variation of the maximum drain saturation current (-0.52 mA/mm K), maximum extrinsic transconductance (-0.13 mS/mm K), and threshold voltage (-1.05 mV/K) are obtained over the temperature range from 300 to 600 K. For three-terminal-controlled hydrogen gas sensing phenomena, a high current variation of 34.9 mA/mm is found in a 1% H2/air gas at 375 K. The exothermic hydrogen adsorption reaction with the enthalpy and entropy of -45.3 kJ mol-1 and -118.2 J mol-1 K-1, respectively, are obtained. Furthermore, the response analysis reveals that the initial response rate is significantly increased with the hydrogen concentration and temperature. The related activation energy for hydrogen adsorption is about 11.65 kJ mol-1.

AB - A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) type hydrogen sensor, with sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and investigated. Based on sensitization and activation processes, the dense and uniform Pd layer exhibits small grain size (38.14 ± 7.24 nm) and less surface roughness in gate region. Experimentally, for a 1 μm gate-length HFET device, advantages of lower temperature-dependent variation of the maximum drain saturation current (-0.52 mA/mm K), maximum extrinsic transconductance (-0.13 mS/mm K), and threshold voltage (-1.05 mV/K) are obtained over the temperature range from 300 to 600 K. For three-terminal-controlled hydrogen gas sensing phenomena, a high current variation of 34.9 mA/mm is found in a 1% H2/air gas at 375 K. The exothermic hydrogen adsorption reaction with the enthalpy and entropy of -45.3 kJ mol-1 and -118.2 J mol-1 K-1, respectively, are obtained. Furthermore, the response analysis reveals that the initial response rate is significantly increased with the hydrogen concentration and temperature. The related activation energy for hydrogen adsorption is about 11.65 kJ mol-1.

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