Comprehensive study of InAlAs/InGaAs metamorphic high electron mobility transistor with Oxidized InAlAs gate

Kuan Wei Lee; Hsien Chang Lin; Kai Lin Lee; Chia Hong Hsieh; Yeong Her Wang

doi:10.1149/1.3240876

Comprehensive study of InAlAs/InGaAs metamorphic high electron mobility transistor with Oxidized InAlAs gate

Kuan Wei Lee, Hsien Chang Lin, Kai Lin Lee, Chia Hong Hsieh, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A comprehensive study of an InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with liquid-phase-oxidized InAlAs as gate insulators has been demonstrated. The MOS-MHEMT exhibits a lower leakage current density with suppressed impact ionization effect, better microwave characteristics, and improved noise performance in comparison with the conventional Schottky gate metamorphic high electron mobility transistor. The unity current gain cutoff and maximum oscillation frequencies are 29.7 and 58.8 GHz, respectively, for MOS-MHEMT. Also, the large-signal power gain, saturated output power, and maximum power-added efficiency at 2.4 GHz are 18.66 dB, 14.32 dBm, and 34%, respectively. The introduced liquid phase oxidation does not degrade the device radio-frequency performance, which is a good candidate for high speed applications.

Original language	English
Pages (from-to)	H925-H929
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	12
DOIs	https://doi.org/10.1149/1.3240876
Publication status	Published - 2009 Nov 10

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3240876

Cite this

@article{df1b247ba8d9477b9bc2ec2c7952a8ee,

title = "Comprehensive study of InAlAs/InGaAs metamorphic high electron mobility transistor with Oxidized InAlAs gate",

abstract = "A comprehensive study of an InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with liquid-phase-oxidized InAlAs as gate insulators has been demonstrated. The MOS-MHEMT exhibits a lower leakage current density with suppressed impact ionization effect, better microwave characteristics, and improved noise performance in comparison with the conventional Schottky gate metamorphic high electron mobility transistor. The unity current gain cutoff and maximum oscillation frequencies are 29.7 and 58.8 GHz, respectively, for MOS-MHEMT. Also, the large-signal power gain, saturated output power, and maximum power-added efficiency at 2.4 GHz are 18.66 dB, 14.32 dBm, and 34%, respectively. The introduced liquid phase oxidation does not degrade the device radio-frequency performance, which is a good candidate for high speed applications.",

author = "Lee, {Kuan Wei} and Lin, {Hsien Chang} and Lee, {Kai Lin} and Hsieh, {Chia Hong} and Wang, {Yeong Her}",

year = "2009",

month = nov,

day = "10",

doi = "10.1149/1.3240876",

language = "English",

volume = "156",

pages = "H925--H929",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Comprehensive study of InAlAs/InGaAs metamorphic high electron mobility transistor with Oxidized InAlAs gate

AU - Lee, Kuan Wei

AU - Lin, Hsien Chang

AU - Lee, Kai Lin

AU - Hsieh, Chia Hong

AU - Wang, Yeong Her

PY - 2009/11/10

Y1 - 2009/11/10

N2 - A comprehensive study of an InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with liquid-phase-oxidized InAlAs as gate insulators has been demonstrated. The MOS-MHEMT exhibits a lower leakage current density with suppressed impact ionization effect, better microwave characteristics, and improved noise performance in comparison with the conventional Schottky gate metamorphic high electron mobility transistor. The unity current gain cutoff and maximum oscillation frequencies are 29.7 and 58.8 GHz, respectively, for MOS-MHEMT. Also, the large-signal power gain, saturated output power, and maximum power-added efficiency at 2.4 GHz are 18.66 dB, 14.32 dBm, and 34%, respectively. The introduced liquid phase oxidation does not degrade the device radio-frequency performance, which is a good candidate for high speed applications.

AB - A comprehensive study of an InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with liquid-phase-oxidized InAlAs as gate insulators has been demonstrated. The MOS-MHEMT exhibits a lower leakage current density with suppressed impact ionization effect, better microwave characteristics, and improved noise performance in comparison with the conventional Schottky gate metamorphic high electron mobility transistor. The unity current gain cutoff and maximum oscillation frequencies are 29.7 and 58.8 GHz, respectively, for MOS-MHEMT. Also, the large-signal power gain, saturated output power, and maximum power-added efficiency at 2.4 GHz are 18.66 dB, 14.32 dBm, and 34%, respectively. The introduced liquid phase oxidation does not degrade the device radio-frequency performance, which is a good candidate for high speed applications.

UR - http://www.scopus.com/inward/record.url?scp=70350719131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350719131&partnerID=8YFLogxK

U2 - 10.1149/1.3240876

DO - 10.1149/1.3240876

M3 - Article

AN - SCOPUS:70350719131

SN - 0013-4651

VL - 156

SP - H925-H929

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

Comprehensive study of InAlAs/InGaAs metamorphic high electron mobility transistor with Oxidized InAlAs gate

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this