Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs graded layers

Shiou Ying Cheng; Chun Yuan Chen; Jing Yuh Chen; Hung Ming Chuang; Chih Hung Yen; Wen Chau Liu

doi:10.1116/1.1763890

Comprehensive study of InGaP-Al_xGa_1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of Al_xGa_1-xAs graded layers

Shiou Ying Cheng, Chun Yuan Chen, Jing Yuh Chen, Hung Ming Chuang, Chih Hung Yen, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The characteristics of InGaP-Al_xGa_1-xAs-GaAs composite-emitter heterojunction bipolar transistors (CEHBT) were studied for different thickness of Al_xGa_1-x graded layers. It was found that CEHBT with 70 Å∼100 Å Al_xGa _1-xAs graded layers exhibited better properties due to the absence of potential spike. Two practical CEHBT with 0 and 100 å AlxGa _1-xAs graded layers were fabricated in order to compare there properties experimentally. The results show usability of CEHBT with an appropriate thicknesses of the Al_xGa_1-xAs for analog, digital, and microwave device applications.

Original language	English
Pages (from-to)	1699-1704
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1763890
Publication status	Published - 2004 Jul

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1763890

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Cheng, S. Y., Chen, C. Y., Chen, J. Y., Chuang, H. M., Yen, C. H., & Liu, W. C. (2004). Comprehensive study of InGaP-Al_xGa_1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of Al_xGa_1-xAs graded layers. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(4), 1699-1704. https://doi.org/10.1116/1.1763890

@article{4867ff169a42433c8d6b1d3a86f5d00c,

title = "Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs graded layers",

abstract = "The characteristics of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors (CEHBT) were studied for different thickness of AlxGa1-x graded layers. It was found that CEHBT with 70 {\AA}∼100 {\AA} AlxGa 1-xAs graded layers exhibited better properties due to the absence of potential spike. Two practical CEHBT with 0 and 100 {\aa} AlxGa 1-xAs graded layers were fabricated in order to compare there properties experimentally. The results show usability of CEHBT with an appropriate thicknesses of the AlxGa1-xAs for analog, digital, and microwave device applications.",

author = "Cheng, {Shiou Ying} and Chen, {Chun Yuan} and Chen, {Jing Yuh} and Chuang, {Hung Ming} and Yen, {Chih Hung} and Liu, {Wen Chau}",

year = "2004",

month = jul,

doi = "10.1116/1.1763890",

language = "English",

volume = "22",

pages = "1699--1704",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

Cheng, SY, Chen, CY, Chen, JY, Chuang, HM, Yen, CH & Liu, WC 2004, 'Comprehensive study of InGaP-Al_xGa_1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of Al_xGa_1-xAs graded layers', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 4, pp. 1699-1704. https://doi.org/10.1116/1.1763890

Comprehensive study of InGaP-Al_xGa_1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of Al_xGa_1-xAs graded layers. / Cheng, Shiou Ying; Chen, Chun Yuan; Chen, Jing Yuh et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 4, 07.2004, p. 1699-1704.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs graded layers

AU - Cheng, Shiou Ying

AU - Chen, Chun Yuan

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AU - Chuang, Hung Ming

AU - Yen, Chih Hung

AU - Liu, Wen Chau

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N2 - The characteristics of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors (CEHBT) were studied for different thickness of AlxGa1-x graded layers. It was found that CEHBT with 70 Å∼100 Å AlxGa 1-xAs graded layers exhibited better properties due to the absence of potential spike. Two practical CEHBT with 0 and 100 å AlxGa 1-xAs graded layers were fabricated in order to compare there properties experimentally. The results show usability of CEHBT with an appropriate thicknesses of the AlxGa1-xAs for analog, digital, and microwave device applications.

AB - The characteristics of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors (CEHBT) were studied for different thickness of AlxGa1-x graded layers. It was found that CEHBT with 70 Å∼100 Å AlxGa 1-xAs graded layers exhibited better properties due to the absence of potential spike. Two practical CEHBT with 0 and 100 å AlxGa 1-xAs graded layers were fabricated in order to compare there properties experimentally. The results show usability of CEHBT with an appropriate thicknesses of the AlxGa1-xAs for analog, digital, and microwave device applications.

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Comprehensive study of InGaP-Al_xGa_1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of Al_xGa_1-xAs graded layers

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