Comprehensive study of InGaP/Al xGa 1-xAs/GaAs heterojunction bipolar transistors with different doping concentrations of Al xGa 1-xAs graded layers

Shiou Ying Cheng, Jing Yuh Chen, Chun Yuan Chen, Hung Ming Chuang, Chih Hung Yen, Kuan Ming Lee, Wen-Chau Liu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The performances of InGaP/Al xGa 1-xAs/GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of Al xGa 1-xAs graded layers are theoretically studied. The use of the Al xGa 1-xAs graded layer plays a key role in affecting the direct current and radio frequency performances of the studied HBTs. It is found that the studied devices with suitable doping concentrations of Al xGa 1-xAs graded layers exhibit lower offset voltages, saturation voltages, and base and collector current ideality factors. Furthermore, due to the use of proper doping concentrations of Al xGa 1-xAs graded layers, the studied devices show high values of the unity current gain cut-off frequency (f T) and maximum oscillation frequency (f max). It is known that, from the theoretical analysis, the appropriate doping concentration of the Al xGa 1-xAs graded layer is 1 × 10 16 to 1 × 10 18 cm -3. Consequently, this work is promising for device engineers to design high-performance HBT structures.

Original languageEnglish
Pages (from-to)351-358
Number of pages8
JournalSemiconductor Science and Technology
Volume19
Issue number3
DOIs
Publication statusPublished - 2004 Mar

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Doping (additives)
Cutoff frequency
Electric potential
accumulators
low voltage
engineers
unity
radio frequencies
Engineers
cut-off
direct current
gallium arsenide
saturation
oscillations
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Cheng, Shiou Ying ; Chen, Jing Yuh ; Chen, Chun Yuan ; Chuang, Hung Ming ; Yen, Chih Hung ; Lee, Kuan Ming ; Liu, Wen-Chau. / Comprehensive study of InGaP/Al xGa 1-xAs/GaAs heterojunction bipolar transistors with different doping concentrations of Al xGa 1-xAs graded layers. In: Semiconductor Science and Technology. 2004 ; Vol. 19, No. 3. pp. 351-358.
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abstract = "The performances of InGaP/Al xGa 1-xAs/GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of Al xGa 1-xAs graded layers are theoretically studied. The use of the Al xGa 1-xAs graded layer plays a key role in affecting the direct current and radio frequency performances of the studied HBTs. It is found that the studied devices with suitable doping concentrations of Al xGa 1-xAs graded layers exhibit lower offset voltages, saturation voltages, and base and collector current ideality factors. Furthermore, due to the use of proper doping concentrations of Al xGa 1-xAs graded layers, the studied devices show high values of the unity current gain cut-off frequency (f T) and maximum oscillation frequency (f max). It is known that, from the theoretical analysis, the appropriate doping concentration of the Al xGa 1-xAs graded layer is 1 × 10 16 to 1 × 10 18 cm -3. Consequently, this work is promising for device engineers to design high-performance HBT structures.",
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Comprehensive study of InGaP/Al xGa 1-xAs/GaAs heterojunction bipolar transistors with different doping concentrations of Al xGa 1-xAs graded layers. / Cheng, Shiou Ying; Chen, Jing Yuh; Chen, Chun Yuan; Chuang, Hung Ming; Yen, Chih Hung; Lee, Kuan Ming; Liu, Wen-Chau.

In: Semiconductor Science and Technology, Vol. 19, No. 3, 03.2004, p. 351-358.

Research output: Contribution to journalArticle

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AU - Chen, Jing Yuh

AU - Chen, Chun Yuan

AU - Chuang, Hung Ming

AU - Yen, Chih Hung

AU - Lee, Kuan Ming

AU - Liu, Wen-Chau

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N2 - The performances of InGaP/Al xGa 1-xAs/GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of Al xGa 1-xAs graded layers are theoretically studied. The use of the Al xGa 1-xAs graded layer plays a key role in affecting the direct current and radio frequency performances of the studied HBTs. It is found that the studied devices with suitable doping concentrations of Al xGa 1-xAs graded layers exhibit lower offset voltages, saturation voltages, and base and collector current ideality factors. Furthermore, due to the use of proper doping concentrations of Al xGa 1-xAs graded layers, the studied devices show high values of the unity current gain cut-off frequency (f T) and maximum oscillation frequency (f max). It is known that, from the theoretical analysis, the appropriate doping concentration of the Al xGa 1-xAs graded layer is 1 × 10 16 to 1 × 10 18 cm -3. Consequently, this work is promising for device engineers to design high-performance HBT structures.

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