Keyphrases
InGaP
100%
Gallium Arsenide
100%
InGaAs
100%
InP HEMT
100%
Dual-channel
100%
Triple-doped
75%
Device Performance
50%
Microwave Performance
50%
Sheet Density
50%
High Performance
25%
Digital Devices
25%
Two Dimensional
25%
High Current
25%
Device Characteristics
25%
Buffer Layer
25%
Transconductance
25%
Microwave Devices
25%
Schottky
25%
Device Application
25%
DC Performance
25%
Carrier Distribution
25%
Current Drivability
25%
Pinch-off
25%
Energy Band Diagram
25%
Saturation Characteristics
25%
Engineering
Gallium Arsenide
100%
Indium Gallium Arsenide
100%
Device Performance
66%
Two Dimensional
33%
Experimental Result
33%
Good Agreement
33%
Buffer Layer
33%
Microwave Devices
33%
Energy Band Diagram
33%
Improving Device
33%
Material Science
Gallium Arsenide
100%
Electron Mobility
100%
Transistor
100%
Indium Gallium Arsenide
100%
Density
50%
Buffer Layer
25%