TY - JOUR
T1 - Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode
AU - Tsai, Tsung Han
AU - Chen, Huey Ing
AU - Lin, Kun Wei
AU - Hung, Ching Wen
AU - Hsu, Chia Hao
AU - Chen, Li Yang
AU - Chu, Kuei Yi
AU - Liu, Wen Chau
N1 - Funding Information:
Part of this work was supported by the National Science Council of the Republic of China under contract no. NSC-95-2221-E-434-MY2.
PY - 2008/6
Y1 - 2008/6
N2 - In this work, the temperature dependences of a Pd/AlGaN Schottky diode-type hydrogen sensor are investigated. The effects of temperature on parameters such as breakdown voltage, response time, and series resistance are presented. Experimentally, under a fixed current bias of -2×10-5 A a reverse voltage response as high as 6 V is observed. The hydrogen adsorption effect also exhibits influences on the series resistance which is decreased by 18 Ω upon exposing to hydrogen gas at 200 °C. Besides, the ideality factor n shows a decreasing trend with the introduction of hydrogen gas. The voltage dependence on sensor performance is also studied. By increasing the voltage from 0.35 to 1 V, the response time is decreased by 15 s under the 1010 ppm H2/air gas. Furthermore, based on the kinetic adsorption analysis the rate constant kr increases from 6.22×10-1 to 1.54 s-1 at 300 °C with exposing to 99.4 and 9660 ppm H2/air gases, respectively. Therefore, on the basis of the compatibility with AlGaN-based microwave devices, the studied Pd/AlGaN hydrogen sensor shows the promise for fabricating the on-chip wireless senor systems.
AB - In this work, the temperature dependences of a Pd/AlGaN Schottky diode-type hydrogen sensor are investigated. The effects of temperature on parameters such as breakdown voltage, response time, and series resistance are presented. Experimentally, under a fixed current bias of -2×10-5 A a reverse voltage response as high as 6 V is observed. The hydrogen adsorption effect also exhibits influences on the series resistance which is decreased by 18 Ω upon exposing to hydrogen gas at 200 °C. Besides, the ideality factor n shows a decreasing trend with the introduction of hydrogen gas. The voltage dependence on sensor performance is also studied. By increasing the voltage from 0.35 to 1 V, the response time is decreased by 15 s under the 1010 ppm H2/air gas. Furthermore, based on the kinetic adsorption analysis the rate constant kr increases from 6.22×10-1 to 1.54 s-1 at 300 °C with exposing to 99.4 and 9660 ppm H2/air gases, respectively. Therefore, on the basis of the compatibility with AlGaN-based microwave devices, the studied Pd/AlGaN hydrogen sensor shows the promise for fabricating the on-chip wireless senor systems.
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U2 - 10.1016/j.ijhydene.2008.03.055
DO - 10.1016/j.ijhydene.2008.03.055
M3 - Article
AN - SCOPUS:44749088469
VL - 33
SP - 2986
EP - 2992
JO - International Journal of Hydrogen Energy
JF - International Journal of Hydrogen Energy
SN - 0360-3199
IS - 12
ER -