Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode

Tsung Han Tsai; Huey Ing Chen; Kun Wei Lin; Ching Wen Hung; Chia Hao Hsu; Li Yang Chen; Kuei Yi Chu; Wen Chau Liu

doi:10.1016/j.ijhydene.2008.03.055

Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode

Tsung Han Tsai, Huey Ing Chen, Kun Wei Lin, Ching Wen Hung, Chia Hao Hsu, Li Yang Chen, Kuei Yi Chu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

In this work, the temperature dependences of a Pd/AlGaN Schottky diode-type hydrogen sensor are investigated. The effects of temperature on parameters such as breakdown voltage, response time, and series resistance are presented. Experimentally, under a fixed current bias of -2×10^-5 A a reverse voltage response as high as 6 V is observed. The hydrogen adsorption effect also exhibits influences on the series resistance which is decreased by 18 Ω upon exposing to hydrogen gas at 200 °C. Besides, the ideality factor n shows a decreasing trend with the introduction of hydrogen gas. The voltage dependence on sensor performance is also studied. By increasing the voltage from 0.35 to 1 V, the response time is decreased by 15 s under the 1010 ppm H₂/air gas. Furthermore, based on the kinetic adsorption analysis the rate constant k_r increases from 6.22×10^-1 to 1.54 s^-1 at 300 °C with exposing to 99.4 and 9660 ppm H₂/air gases, respectively. Therefore, on the basis of the compatibility with AlGaN-based microwave devices, the studied Pd/AlGaN hydrogen sensor shows the promise for fabricating the on-chip wireless senor systems.

Original language	English
Pages (from-to)	2986-2992
Number of pages	7
Journal	International Journal of Hydrogen Energy
Volume	33
Issue number	12
DOIs	https://doi.org/10.1016/j.ijhydene.2008.03.055
Publication status	Published - 2008 Jun 1

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Fuel Technology
Condensed Matter Physics
Energy Engineering and Power Technology

Access to Document

10.1016/j.ijhydene.2008.03.055

Fingerprint Dive into the research topics of 'Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode'. Together they form a unique fingerprint.

Cite this

@article{eb2b09453dc54e878a0124f97bd791ca,

title = "Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode",

abstract = "In this work, the temperature dependences of a Pd/AlGaN Schottky diode-type hydrogen sensor are investigated. The effects of temperature on parameters such as breakdown voltage, response time, and series resistance are presented. Experimentally, under a fixed current bias of -2×10-5 A a reverse voltage response as high as 6 V is observed. The hydrogen adsorption effect also exhibits influences on the series resistance which is decreased by 18 Ω upon exposing to hydrogen gas at 200 °C. Besides, the ideality factor n shows a decreasing trend with the introduction of hydrogen gas. The voltage dependence on sensor performance is also studied. By increasing the voltage from 0.35 to 1 V, the response time is decreased by 15 s under the 1010 ppm H2/air gas. Furthermore, based on the kinetic adsorption analysis the rate constant kr increases from 6.22×10-1 to 1.54 s-1 at 300 °C with exposing to 99.4 and 9660 ppm H2/air gases, respectively. Therefore, on the basis of the compatibility with AlGaN-based microwave devices, the studied Pd/AlGaN hydrogen sensor shows the promise for fabricating the on-chip wireless senor systems.",

author = "Tsai, {Tsung Han} and Chen, {Huey Ing} and Lin, {Kun Wei} and Hung, {Ching Wen} and Hsu, {Chia Hao} and Chen, {Li Yang} and Chu, {Kuei Yi} and Liu, {Wen Chau}",

year = "2008",

month = jun,

day = "1",

doi = "10.1016/j.ijhydene.2008.03.055",

language = "English",

volume = "33",

pages = "2986--2992",

journal = "International Journal of Hydrogen Energy",

issn = "0360-3199",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode

AU - Tsai, Tsung Han

AU - Chen, Huey Ing

AU - Lin, Kun Wei

AU - Hung, Ching Wen

AU - Hsu, Chia Hao

AU - Chen, Li Yang

AU - Chu, Kuei Yi

AU - Liu, Wen Chau

PY - 2008/6/1

Y1 - 2008/6/1

N2 - In this work, the temperature dependences of a Pd/AlGaN Schottky diode-type hydrogen sensor are investigated. The effects of temperature on parameters such as breakdown voltage, response time, and series resistance are presented. Experimentally, under a fixed current bias of -2×10-5 A a reverse voltage response as high as 6 V is observed. The hydrogen adsorption effect also exhibits influences on the series resistance which is decreased by 18 Ω upon exposing to hydrogen gas at 200 °C. Besides, the ideality factor n shows a decreasing trend with the introduction of hydrogen gas. The voltage dependence on sensor performance is also studied. By increasing the voltage from 0.35 to 1 V, the response time is decreased by 15 s under the 1010 ppm H2/air gas. Furthermore, based on the kinetic adsorption analysis the rate constant kr increases from 6.22×10-1 to 1.54 s-1 at 300 °C with exposing to 99.4 and 9660 ppm H2/air gases, respectively. Therefore, on the basis of the compatibility with AlGaN-based microwave devices, the studied Pd/AlGaN hydrogen sensor shows the promise for fabricating the on-chip wireless senor systems.

AB - In this work, the temperature dependences of a Pd/AlGaN Schottky diode-type hydrogen sensor are investigated. The effects of temperature on parameters such as breakdown voltage, response time, and series resistance are presented. Experimentally, under a fixed current bias of -2×10-5 A a reverse voltage response as high as 6 V is observed. The hydrogen adsorption effect also exhibits influences on the series resistance which is decreased by 18 Ω upon exposing to hydrogen gas at 200 °C. Besides, the ideality factor n shows a decreasing trend with the introduction of hydrogen gas. The voltage dependence on sensor performance is also studied. By increasing the voltage from 0.35 to 1 V, the response time is decreased by 15 s under the 1010 ppm H2/air gas. Furthermore, based on the kinetic adsorption analysis the rate constant kr increases from 6.22×10-1 to 1.54 s-1 at 300 °C with exposing to 99.4 and 9660 ppm H2/air gases, respectively. Therefore, on the basis of the compatibility with AlGaN-based microwave devices, the studied Pd/AlGaN hydrogen sensor shows the promise for fabricating the on-chip wireless senor systems.

UR - http://www.scopus.com/inward/record.url?scp=44749088469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44749088469&partnerID=8YFLogxK

U2 - 10.1016/j.ijhydene.2008.03.055

DO - 10.1016/j.ijhydene.2008.03.055

M3 - Article

AN - SCOPUS:44749088469

VL - 33

SP - 2986

EP - 2992

JO - International Journal of Hydrogen Energy

JF - International Journal of Hydrogen Energy

SN - 0360-3199

IS - 12

ER -