Comprehensive temperature-dependent studies of metamorphic high electron mobility transistors with double and single δ-doped structures

Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Chun Chia Chen, Chung I. Kao, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The temperature-dependent characteristics of metamorphic high electron mobility transistors (MHEMTs) with double and single δ-doped structure are studied and demonstrated. Due to the use of double δ-doped sheets, the current density in the channel layer and two-dimensional electron gas could effectively be increased. The excellent turn-on voltage of 1.18 (0.80) V, maximum drain saturation current of 544 (524) mA/mm, maximum extrinsic transconductance of 361 (312) mS/mm, unity current gain cutoff frequency of 55.06 GHz, and maximum oscillation frequency of 129.17 GHz are obtained at 300 (510) K for a 0.6 × 100 μm2 gate dimension double δ -doped MHEMT. In addition, using wide-bandgap InAlAs Schottky, spacer, and buffer layers, the carrier confinement could significantly be improved at high temperature. Therefore, excellent thermal stability is achieved for double δ-doped MHEMT. The device with a double δ-doped structure exhibits a considerably low temperature coefficient on threshold voltage (∂V th/∂T) of 0.06 mV/K when the temperature is increased from 330 to 510 K, which is superior to previous reports of related high electron mobility transistors.

Original languageEnglish
Article number6035770
Pages (from-to)4276-4282
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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