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Comprehensive temperature-dependent studies of metamorphic high electron mobility transistors with double and single δ-doped structures
Chien Chang Huang
, Tai You Chen
, Chi Shiang Hsu
, Chun Chia Chen
, Chung I. Kao
,
Wen Chau Liu
Institute of Microelectronics
Master Degree Program on Nano-Integrated-Circuit Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
8
Citations (Scopus)
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Keyphrases
2-dimensional Electron Gas (2DEG)
25%
Buffer Layer
25%
Carrier Confinement
25%
Channel Layer
25%
Current Density
25%
Current Gain Cutoff Frequency
25%
Doped Structure
100%
Double-doped
100%
Drain Saturation Current
25%
Extrinsic Transconductance
25%
High Electron Mobility Transistor
25%
High Temperature
25%
High Thermal Stability
25%
InAlAs
25%
Low Temperature Coefficient
25%
Maximum Oscillation Frequency
25%
Metamorphic High Electron Mobility Transistor (mHEMT)
100%
Schottky
25%
Spacer Layer
25%
Temperature Effect
100%
Temperature-dependent Characteristics
25%
Threshold Voltage
25%
Turn-on Voltage
25%
Wide Bandgap
25%
Material Science
Buffer Layer
20%
Density
20%
Electron Mobility
100%
Thermal Stability
20%
Transistor
100%