Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Kuo-Hsing Kao, Anne S. Verhulst, Rita Rooyackers, Bastien Douhard, Joris Delmotte, Hugo Bender, Olivier Richard, Wilfried Vandervorst, Eddy Simoen, Andriy Hikavyy, Roger Loo, Kai Arstila, Nadine Collaert, Aaron Thean, Marc M. Heyns, Kristin De Meyer

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Band-to-band tunneling parameters of strained indirect bandgap materials are not well-known, hampering the reliability of performance predictions of tunneling devices based on these materials. The nonlocal band-to-band tunneling model for compressively strained SiGe is calibrated based on a comparison of strained SiGe p-i-n tunneling diode measurements and doping-profile-based diode simulations. Dopant and Ge profiles of the diodes are determined by secondary ion mass spectrometry and capacitance-voltage measurements. Theoretical parameters of the band-to-band tunneling model are calculated based on strain-dependent properties such as bandgap, phonon energy, deformation-potential-based electron-phonon coupling, and hole effective masses of strained SiGe. The latter is determined with a 6-band k·p model. The calibration indicates an underestimation of the theoretical electron-phonon coupling with nearly an order of magnitude. Prospects of compressively strained SiGe tunneling transistors are made by simulations with the calibrated model.

Original languageEnglish
Article number214506
JournalJournal of Applied Physics
Volume116
Issue number21
DOIs
Publication statusPublished - 2014 Dec 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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