Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Kuo-Hsing Kao, Anne S. Verhulst, Rita Rooyackers, Bastien Douhard, Joris Delmotte, Hugo Bender, Olivier Richard, Wilfried Vandervorst, Eddy Simoen, Andriy Hikavyy, Roger Loo, Kai Arstila, Nadine Collaert, Aaron Thean, Marc M. Heyns, Kristin De Meyer

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Fingerprint Dive into the research topics of 'Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors'. Together they form a unique fingerprint.

Physics & Astronomy