Concentration dependence of carrier localization in InN epilayers

G. W. Shu, P. F. Wu, M. H. Lo, J. L. Shen, T. Y. Lin, H. J. Chang, Y. F. Chen, C. F. Shih, C. A. Chang, N. C. Chen

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Abstract

The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photo luminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.

Original languageEnglish
Article number131913
JournalApplied Physics Letters
Volume89
Issue number13
DOIs
Publication statusPublished - 2006 Oct 6

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Shu, G. W., Wu, P. F., Lo, M. H., Shen, J. L., Lin, T. Y., Chang, H. J., Chen, Y. F., Shih, C. F., Chang, C. A., & Chen, N. C. (2006). Concentration dependence of carrier localization in InN epilayers. Applied Physics Letters, 89(13), [131913]. https://doi.org/10.1063/1.2357545