Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

J. J. Lu, Y. M. Lu, S. I. Tasi, T. L. Hsiung, Hong-Paul Wang, L. Y. Jang

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

Original languageEnglish
Pages (from-to)1548-1552
Number of pages5
JournalOptical Materials
Volume29
Issue number11
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Transition metals
transition metals
Semiconductor materials
conductivity
augmentation
electrical resistivity
X ray absorption spectroscopy
Hall effect
Light transmission
shrinkage
Magnetron sputtering
Carrier concentration
Sputtering
magnetron sputtering
absorption spectroscopy
Energy gap
x rays
sputtering
direct current
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

Cite this

Lu, J. J. ; Lu, Y. M. ; Tasi, S. I. ; Hsiung, T. L. ; Wang, Hong-Paul ; Jang, L. Y. / Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films. In: Optical Materials. 2007 ; Vol. 29, No. 11. pp. 1548-1552.
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Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films. / Lu, J. J.; Lu, Y. M.; Tasi, S. I.; Hsiung, T. L.; Wang, Hong-Paul; Jang, L. Y.

In: Optical Materials, Vol. 29, No. 11, 01.01.2007, p. 1548-1552.

Research output: Contribution to journalArticle

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T1 - Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

AU - Lu, J. J.

AU - Lu, Y. M.

AU - Tasi, S. I.

AU - Hsiung, T. L.

AU - Wang, Hong-Paul

AU - Jang, L. Y.

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AB - Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

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