Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

J. J. Lu, Y. M. Lu, S. I. Tasi, T. L. Hsiung, H. P. Wang, L. Y. Jang

Research output: Contribution to journalArticlepeer-review

101 Citations (Scopus)


Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

Original languageEnglish
Pages (from-to)1548-1552
Number of pages5
JournalOptical Materials
Issue number11
Publication statusPublished - 2007 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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