Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

J. J. Lu; Y. M. Lu; S. I. Tasi; T. L. Hsiung; H. P. Wang; L. Y. Jang

doi:10.1016/j.optmat.2006.08.002

Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

J. J. Lu, Y. M. Lu, S. I. Tasi, T. L. Hsiung, H. P. Wang, L. Y. Jang

Department of Environmental Engineering

Research output: Contribution to journal › Article › peer-review

106 Citations (Scopus)

Abstract

Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10^-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

Original language	English
Pages (from-to)	1548-1552
Number of pages	5
Journal	Optical Materials
Volume	29
Issue number	11
DOIs	https://doi.org/10.1016/j.optmat.2006.08.002
Publication status	Published - 2007 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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10.1016/j.optmat.2006.08.002

Cite this

@article{6015f0df662743399877e4a6c01ff552,

title = "Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films",

abstract = "Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.",

author = "Lu, {J. J.} and Lu, {Y. M.} and Tasi, {S. I.} and Hsiung, {T. L.} and Wang, {H. P.} and Jang, {L. Y.}",

note = "Funding Information: This work was supported by National Science Council of the Republic of China under contract No. NSC-95-2112-M-168-001. ",

year = "2007",

month = jul,

doi = "10.1016/j.optmat.2006.08.002",

language = "English",

volume = "29",

pages = "1548--1552",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

number = "11",

}

TY - JOUR

T1 - Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

AU - Lu, J. J.

AU - Lu, Y. M.

AU - Tasi, S. I.

AU - Hsiung, T. L.

AU - Wang, H. P.

AU - Jang, L. Y.

N1 - Funding Information: This work was supported by National Science Council of the Republic of China under contract No. NSC-95-2112-M-168-001.

PY - 2007/7

Y1 - 2007/7

N2 - Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

AB - Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

UR - http://www.scopus.com/inward/record.url?scp=34249075200&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249075200&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2006.08.002

DO - 10.1016/j.optmat.2006.08.002

M3 - Article

AN - SCOPUS:34249075200

SN - 0925-3467

VL - 29

SP - 1548

EP - 1552

JO - Optical Materials

JF - Optical Materials

IS - 11

ER -

Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

Abstract

All Science Journal Classification (ASJC) codes

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