Conjugate polymer induced enhancement of THz radiation in semiconductors

J. S. Hwang, H. C. Lin, K. I. Lin, T. F. Guo, J. W. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Conjugate polymer induced enhancement of terahertz radiation is observed for the first time in this report. Terahertz radiation (TI-[Z) from the surfaces of various semiconductor wafers and microstructures is studied. The intensities of the THz radiation from the surfaces of certain semiconductors with a thin layer of conjugate polymer (2, 3-dibutoxy-1, 4-polyphenylenevinylene (DB-PPV)) deposited on their surfaces are greatly enhanced. The enhancement of THz radiation depends on the mechanism of inducting the THz radiation. Modulation spectroscopy of photoreflectance (PR) is employed to investigate the change in the built-in electric field and surface or interface state densities, which are closely related to the enhancement of the THz radiation.

Original languageEnglish
Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
Pages59-74
Number of pages16
Edition5
DOIs
Publication statusPublished - 2007 Dec 1
Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number5
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07-10-0707-10-12

Fingerprint

Semiconductor materials
Radiation
Polymers
Interface states
Surface states
Electric fields
Modulation
Spectroscopy
Microstructure

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hwang, J. S., Lin, H. C., Lin, K. I., Guo, T. F., & Chang, J. W. (2007). Conjugate polymer induced enhancement of THz radiation in semiconductors. In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices (5 ed., pp. 59-74). (ECS Transactions; Vol. 11, No. 5). https://doi.org/10.1149/1.2783858
Hwang, J. S. ; Lin, H. C. ; Lin, K. I. ; Guo, T. F. ; Chang, J. W. / Conjugate polymer induced enhancement of THz radiation in semiconductors. ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5. ed. 2007. pp. 59-74 (ECS Transactions; 5).
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Hwang, JS, Lin, HC, Lin, KI, Guo, TF & Chang, JW 2007, Conjugate polymer induced enhancement of THz radiation in semiconductors. in ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 edn, ECS Transactions, no. 5, vol. 11, pp. 59-74, 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting, Washington, DC, United States, 07-10-07. https://doi.org/10.1149/1.2783858

Conjugate polymer induced enhancement of THz radiation in semiconductors. / Hwang, J. S.; Lin, H. C.; Lin, K. I.; Guo, T. F.; Chang, J. W.

ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5. ed. 2007. p. 59-74 (ECS Transactions; Vol. 11, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Conjugate polymer induced enhancement of terahertz radiation is observed for the first time in this report. Terahertz radiation (TI-[Z) from the surfaces of various semiconductor wafers and microstructures is studied. The intensities of the THz radiation from the surfaces of certain semiconductors with a thin layer of conjugate polymer (2, 3-dibutoxy-1, 4-polyphenylenevinylene (DB-PPV)) deposited on their surfaces are greatly enhanced. The enhancement of THz radiation depends on the mechanism of inducting the THz radiation. Modulation spectroscopy of photoreflectance (PR) is employed to investigate the change in the built-in electric field and surface or interface state densities, which are closely related to the enhancement of the THz radiation.

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Hwang JS, Lin HC, Lin KI, Guo TF, Chang JW. Conjugate polymer induced enhancement of THz radiation in semiconductors. In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 ed. 2007. p. 59-74. (ECS Transactions; 5). https://doi.org/10.1149/1.2783858