Conjugate polymer induced enhancement of THz radiation in semiconductors

J. S. Hwang, H. C. Lin, K. I. Lin, T. F. Guo, J. W. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Conjugate polymer induced enhancement of terahertz radiation is observed for the first time in this report. Terahertz radiation (TI-[Z) from the surfaces of various semiconductor wafers and microstructures is studied. The intensities of the THz radiation from the surfaces of certain semiconductors with a thin layer of conjugate polymer (2, 3-dibutoxy-1, 4-polyphenylenevinylene (DB-PPV)) deposited on their surfaces are greatly enhanced. The enhancement of THz radiation depends on the mechanism of inducting the THz radiation. Modulation spectroscopy of photoreflectance (PR) is employed to investigate the change in the built-in electric field and surface or interface state densities, which are closely related to the enhancement of the THz radiation.

Original languageEnglish
Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
PublisherElectrochemical Society Inc.
Pages59-74
Number of pages16
Edition5
ISBN (Electronic)9781566775717
ISBN (Print)9781566775717
DOIs
Publication statusPublished - 2007
Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number5
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC
Period07-10-0707-10-12

All Science Journal Classification (ASJC) codes

  • General Engineering

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